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The effect of disorder on transport and magnetization in ferromagnetic III-V semiconductors, in particular (Ga,Mn)As, is studied theoretically. We show that Coulomb-induced correlations of the defect positions are crucial for the transport…

材料科学 · 物理学 2009-11-07 C. Timm , F. Schäfer , F. von Oppen

In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic…

材料科学 · 物理学 2007-05-23 S. Sanvito , G. Theurich , N. A. Hill

This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II-VI and III-V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating)…

材料科学 · 物理学 2007-05-23 R. N. Bhatt , Mona Berciu , Malcolm P. Kennett , Xin Wan

We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…

无序系统与神经网络 · 物理学 2009-10-31 Mona Berciu , R. N. Bhatt

The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport…

材料科学 · 物理学 2009-11-10 A. Kaminski , S. Das Sarma

We present a quantitative theory for ferromagnetism in diluted III-V ferromagnetic semi-conductors in the presence of the two types of defects commonly supposed to be responsible for compensation: As anti-sites and Mn interstitials. In each…

无序系统与神经网络 · 物理学 2007-05-23 Georges ~Bouzerar , Timothy Ziman , Josef Kudrnovský

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure…

材料科学 · 物理学 2009-11-11 H. Akai , M. Ogura

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…

介观与纳米尺度物理 · 物理学 2007-05-23 Mona Berciu , R. N. Bhatt

We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…

凝聚态物理 · 物理学 2009-11-07 S. -R. Eric Yang , A. H. MacDonald

The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional…

The substitution of Mn in the III-V diluted magnetic semiconductors leads to a strong electron scattering on impurities. Besides the features induced in the valence band by the hybridization with the Mn d-states, also the conduction band is…

材料科学 · 物理学 2007-05-23 J. Masek , F. Maca

In this contribution we would like to revisit the problems of ferromagnetism (F) and antiferromagnetism (AF) in the pure itinerant model. These methods can be extended later to the superconducting materials. In our model we assume the…

强关联电子 · 物理学 2016-08-16 G. Górski , J. Mizia

The rapidly developing field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10…

材料科学 · 物理学 2009-11-10 S. Das Sarma , E. H. Hwang , A. Kaminski

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity level in the bandgap to the valence band can explain ferromagnetism…

材料科学 · 物理学 2009-11-07 V. I. Litvinov , V. K. Dugaev

We address the role of correlations between spin and charge degrees of freedom on the dynamical properties of ferromagnetic systems governed by the magnetic exchange interaction between itinerant and localized spins. For this we introduce a…

强关联电子 · 物理学 2008-08-25 M. D. Kapetanakis , I. E. Perakis

Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities…

材料科学 · 物理学 2023-08-04 M. Górska , Ł. Kilański , A. Łusakowski

The theory of the I-V characteristics in diffusive superconductor/weak ferromagnet/superconductor (SFS) junction is developed. We show that the exchange field $h$ of the ferromagnet manifests itself as an additional conductance peak at $eV…

超导电性 · 物理学 2009-11-11 I. V. Bobkova , A. M. Bobkov

We have analyzed the magnetic interactions of a five orbital model for iron superconductors treated both within Hartree-Fock and Heisenberg approximations. We have found that the exchange constants depend non-trivially on the Fe-As-Fe angle…

强关联电子 · 物理学 2012-10-08 M. J. Calderon , G. Leon , B. Valenzuela , E. Bascones

Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS…

材料科学 · 物理学 2009-11-07 Byounghak Lee , T. Jungwirth , A. H. MacDonald

A close link between the charge transfer electronic structures and polarity dependent high-TC ferromagnetism of TM2+:ZnO DMSs (TM2+ = 3d ions) is demonstrated. Trends in ferromagnetism across the 3d series of TM2+:ZnO DMSs predicted from…

材料科学 · 物理学 2007-05-23 Kevin R. Kittilstved , William K. Liu , Daniel R. Gamelin
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