相关论文: Spin accumulation in ferromagnetic single-electron…

We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances…

The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect,…

We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel…

We experimentally study spin accumulation in an aluminium island with all dimensions smaller than the spin relaxation length, so that the spin imbalance throughout the island is uniform. Electrical injection and detection of the spin…

Spin dependent single electron tunneling in a ferromagnetic double junction is investigated theoretically in the limit of incoherent sequential tunneling. The junction consists of a small nonmagnetic metallic grain with discrete energy…

Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation,…

Spin dependent transport in a ferromagnet/superconductor/ferromagnet single electron transistor is studied theoretically with spin accumulation, spin relaxation, gap suppression, and charging effects taken into account. A strong dependence…

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…

We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…

An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the…

We measure the spin splitting in a magnetic field $B$ of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most…

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…

Using a density matrix formulation for the effective action, we obtain a set of macroscopic equations that describe spin accumulation in a non-homogeneous ferromagnet. We give a new expression for the spin current which extends previous…

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…

Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin…

We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…

We have measured electron spin accumulation at 4.2 K and at room temperature in an aluminium island with all dimensions (400nm x 400nm x 30nm) smaller than the spin relaxation length. For the first time, we obtain uniform spin accumulation…

We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth…