相关论文: Ballistic Spin Injection from Fe(001) into ZnSe an…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…
We develop a method for the calculation of ballistic transport from first principles. The multiple scattering screened Korringa-Kohn-Rostoker (KKR) method is combined with a Green's function formulation of the Landauer approach for the…
A spin filtering device using quantum spin interference is theoretically proposed in a GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit couplings. The device achieves polarized electron currents by separating spin up…
We report the successful electrical creation of spin polarization in p-type Si at room temperature by using an epitaxial MgO(001) tunnel barrier and Fe(001) electrode. Reflection high-energy electron diffraction observations revealed that…
We study a one-dimensional (iso)spin 1/2 Bose gas with repulsive delta-function interaction by the Bethe Ansatz method and discuss the excitations above the polarized ground state. In addition to phonons the system features spin waves with…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in…
By decoupling the geometric from the dynamical contributions in the scattering processes, we develop a method to compute the scattering matrix of electrons in a one-dimensional coherent conductor connected to two electrodes. In particular,…
Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent…
A domain wall (DW) which moves parallel to a magnetically compensated interface between an antiferromagnetic insulator (AFMI) and a two-dimensional (2D) metal can pump spin polarization into the metal. It is assumed that localized spins of…
We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin-orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to…
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use…
A proposal to detect the purported canted antiferromagnet order for the $\nu=0$ quantum Hall state of graphene based on a two-terminal spin transport setup is theoretically discussed. In the presence of a magnetic field normal to the…
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
We design spin filters for particles with potentially arbitrary spin S (= 1/2, 1, 3/2,....) using a one-dimensional periodic chain of magnetic atoms as a quantum device. Describing the system within a tight-binding formalism we present an…