Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

P. Van Dorpe; V. F. Motsnyi; M. Nijboer; E. Goovaerts; V. I. Safarov; J. Das; W. Van Roy; G. Borghs; J. De Boeck

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Materials Science 2009-09-29 v2

Authors: P. Van Dorpe , V. F. Motsnyi , M. Nijboer , E. Goovaerts , V. I. Safarov , J. Das , W. Van Roy , G. Borghs , J. De Boeck

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Abstract

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.

Cite

@article{arxiv.cond-mat/0208325,
  title  = {Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode},
  author = {P. Van Dorpe and V. F. Motsnyi and M. Nijboer and E. Goovaerts and V. I. Safarov and J. Das and W. Van Roy and G. Borghs and J. De Boeck},
  journal= {arXiv preprint arXiv:cond-mat/0208325},
  year   = {2009}
}

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