相关论文: Weak localization in InSb thin films heavily doped…

We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more…

We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…

We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…

A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs).…

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with…

Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based…

We report measurements of the electron dephasing time extracted from the weak localization (WL) correction to the average conductance in an open AlGaAs/GaAs quantum dot from 1 K to 13 mK. In agreement with theoretical predictions but in…

Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage,…

We investigate electron transport and phase-breaking processes in thin titanium nitride (TiN) films of epitaxial quality. Previous studies show that a minute surface magnetic disorder significantly reduces the critical temperature…

A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si…

A weak-localization effect has been studied in macroscopically inhomogeneous 2D system. It is shown, that although the real phase breaking length tends to infinity when the temperature tends to zero, such a system can reveal a saturated…

We have studied Nb lambda/2 coplanar-waveguide (CPW) resonators whose resonant frequencies are 10-11 GHz. The resonators have different film thicknesses, t=0.05, 0.1, 0.2, and 0.3 um. We measured at low temperatures, T=0.02-5 K, one of the…

We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from…

We present an undergraduate lab that investigates weak localization in thin silver films. The films prepared in our lab have thickness, $a$, between 60-200 \AA, a mesoscopic length scale. At low temperatures, the inelastic dephasing length…

We study the effect of weak localization on the transition temperatures of superconductors using time-reversed scattered state pairs, and find that the weak localization effect weakens electron-phonon interactions. With solving the BCS…

Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…

We have studied the effect of thermal annealing on electron dephasing times $\tau_\phi$ in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using weak-localization…

The magnetoresistance of InSb has been intensively investigated. The experiments we perform here focus on weak field magnetoresistance of InSb thin film. We investigate the magnetoresistance of InSb films in perpendicular, tilted as well as…