相关论文: Mobility-Dependence of the Critical Density in Two…

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured.…

Quasiperiodic systems offer an appealing intermediate between long-range ordered and genuine disordered systems, with unusual critical properties. One-dimensional models that break the so-called self-dual symmetry usually display a mobility…

We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled…

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…

Using Ioffe-Regel-Mott (IRM) criterion for strong localization crossover in disordered doped 2D electron systems, we theoretically study the relationships among the three key experimentally determined localization quantities: critical…

A new analysis and new Molecular Dynamics (MD) simulations of the measurements of the mobility $\mu_{i}$ of O$_{2}^{-} $ ions in dense supercritical Ar gas are reported. $\mu_{i}$ shows a marked dependence on the distance from the critical…

Several phenomena related to the critical behaviour of non-interacting electrons in a disordered 2d tight-binding system with a magnetic field are studied. Localization lengths, critical exponents and density of states are computed using…

We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…

We study the metal-insulator transition in a tight-binding one-dimensional (1D) model with long-range correlated disorder. In the case of diagonal disorder with site energy within $[-\frac{W}{2},\frac{W}{2}]$ and having a power-law spectral…

The zero temperature transport properties of two-dimensional lattice systems with static random magnetic flux per plaquette and zero mean are investigated numerically. We study the two-terminal conductance and its dependence on energy,…

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$…

Mobility edges (ME), defined as critical energies that separate the extended states from the localized states, are a significant topic in quantum physics. In this paper, we demonstrate the existence of two exact new mobility edges for two…

Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostructures, the Hall effect is not applicable, and the density…

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…

We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…

We Study in this paper the scaling and statistical properties of the $ac$ conductivity of thin metal-dielectric films in different regions of the loss in the metallic components and particularly in the limit of vanishing loss. We model the…

In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…