相关论文: Strain-induced modification of spin-optical dynami…
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic…
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this…
Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the…
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin…
Hybrid quantum photonic systems connect classical photonics to the quantum world and promise to deliver efficient light-matter quantum interfaces while leveraging the advantages of both, the classical and the quantum, subsystems. However,…
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their…
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…
Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin…
Negatively charged silicon vacancy centers (SiV$^-$) in diamond exhibit excellent spin coherence and optical properties, making them promising candidates for quantum technologies. However, the strain-induced inhomogeneous distribution of…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic…
Defect charge-state dynamics are central to both spin-photon interfaces and photoelectrical spin readout. Despite the significance of silicon vacancies (V1/V2) in silicon carbide (4H-SiC) for both applications, their ionization behavior has…
Neutral silicon-carbon divacancy (V$_{Si}$V$_{C}$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline centers. Within the theoretical framework of spin-polarized…
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the…
Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This…
Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV$^0$) and the negative nitrogen-vacancy (NV$^-$), are among leading building blocks of solid-state quantum technologies. Integrating these defects…
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of…
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum…
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of…