相关论文: Hole concentrations in doped gray {\alpha}-Sn on I…
$\alpha$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and…
$\alpha$-Sn (gray tin) is a group-IV, zero-gap semiconductor with potential use in infrared detectors, necessitating a clear understanding of its dielectric properties. We report the first-principles calculations of the band structure and…
The surface and bulk states in topological materials have shown promise in many applications. Grey or $\alpha$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both…
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to…
In this work, layered perovskite SBN was investigated in a new doped form for hole as well as electron transport layer (HTL/ETL) in perovskite solar cells. This work was targeted to conclude the effect of tin doping in lanthanum-bismuth…
We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a…
We report on S-doping of ZnSb for S concentrations ranging from 0.02 at% to 2.5 at%. There are no previous reports on S-doping. ZnSb is a thermoelectric material with some advantages for the temperature range 400 K - 600 K. The solid…
$\alpha$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to…
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field…
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at…
Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be…
Gray tin, also known as {\alpha}-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved…
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR)…
The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is…
We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investigated using spin density functional theory calculation in…
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy…
We report on the electronic structure of the elemental topological semimetal $\alpha$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk…
Gray tin, also known as $\alpha$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum…
The structural, optical and electrical properties of spray deposited antimony (Sb) doped tin oxide (SnO2) thin films, prepared from SnCl4 precursor, have been studied as a function of antimony doping concentration. The doping concentration…
We study the luminescence of unintentionally doped and Si-doped In$_x$Ga$_{1-x}$N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped…