相关论文: Quantum electrometry in a silicon carbide power de…
High resolution resistors capable of detecting minuscule currents are vital for advanced sensors, but existing off-shelf models struggle with inconsistent resistance under varying voltages. The underlying physics of this issue is rooted in…
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their…
We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
In this work, we present a method for targeted, maskless, and scalable fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. The resolution of implanted VSi defects is limited to a few…
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications, where divacancy qubit, that is similar to the negatively…
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum…
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have…
The hybrid architecture of the Timepix (TPX) family of detectors enables the use of different semiconductor sensors, most commonly silicon (Si), as well as high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs).…
Pressure-induced magnetic phase transition is attracting interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cells. However, detection of the local sample magnetic properties is a great…
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
We report electrical spin state readout and coherent control of an ensemble ($\sim$540) of silicon vacancies ($\mathrm{V}_{\mathrm{Si}}^{-}$) in a silicon carbide-on-insulator (SiCOI) platform, with excitation wavelengths from 780 to 990…
High-precision measurements of the electron affinities (EA) of the three stable isotopes of silicon, $^{28}$Si, $^{29}$Si and $^{30}$Si, have been performed at the cryogenic electrostatic ion-beam storage ring DESIREE. The quantum states of…
This work presents a physics based compact model for SiC power MOSFETs that accurately describes the I-V characteristics up to large voltages and currents. Charge-based formulations accounting for the different physics of SiC power MOSFETs…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…
Nitrogen-vacancy (NV) center in diamond is a promising quantum sensor with remarkably versatile sensing capabilities. While scanning NV magnetometry is well-established, NV electrometry has been so far limited to bulk diamonds. Here we…
Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV…