Precision measurements on Si-
Abstract
High-precision measurements of the electron affinities (EA) of the three stable isotopes of silicon, Si, Si and Si, have been performed at the cryogenic electrostatic ion-beam storage ring DESIREE. The quantum states of the ions were manipulated using laser depletion, and the ions were photodetached by laser photodetachment threshold spectroscopy. These EA values are the first reported for Si and Si and provide a reduced uncertainty for Si. The resulting EAs are Si eV, Si eV and Si eV, with the corresponding isotope shifts Si micro eV and Si micro eV. In addition to these measurements, the resolution and signal-to-background level was sufficient to reveal the hyperfine structure splitting in the Si isotope, which we report to be $1.8(4) micro eV.
Cite
@article{arxiv.2404.06226,
title = {Precision measurements on Si-},
author = {J. Karls and H. Cederquist and N. D. Gibson and J. Grumer and M. Ji and I. Kardasch and D. Leimbach and P. Martini and J. E. Navarro Navarrete and R. Poulose and S. Rosen and H. T. Schmidt and A. Simonsson and H. Zettergren and D. Hanstorp},
journal= {arXiv preprint arXiv:2404.06226},
year = {2024}
}