English
Related papers

Related papers: Precision measurements on Si-

200 papers

The electron affinity (EA) of atomic selenium, previously established as 16,297.276(9) cm-1 based on the laser photodetachment microscopy (LPM) measurements in 2012, exhibited a significant deviation from other earlier experimental values,…

Atomic Physics · Physics 2025-06-13 Rui Zhang , Wenru Jie , Jiayi Chen , Qihan Liu , Chuangang Ning

The electron affinities eA(S) are measured for the two isotopes 32S and 34S (16752.9753(41) and 16752.9776(85) cm-1, respectively). The isotope shift in the electron affinity is found to be positive, eA(34S)-eA(32S) = +0.0023(70) cm-1, but…

We report measurements of electron spin echo envelope modulation (ESEEM) performed at millikelvin temperatures in a custom-built high-sensitivity spectrometer based on superconducting micro-resonators. The high quality factor and small mode…

Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope…

The hyperfine structure and isotope shifts of the 3s23p2 3P2 to 3s3p3 3Do3 transition in silicon have been measured. The transition at 221.7 nm was studied by laser induced fluorescence in an atomic Si beam. For 29Si, the hyperfine A…

Atomic Physics · Physics 2015-05-20 Siu Au Lee , William Fairbank

We describe a new table-top electrostatic storage ring concept for $30$ keV polarized ions at frozen spin condition. The device will ultimately be capable of measuring magnetic fields with a resolution of 10$^{-21}$ T with sub-mHz…

High Energy Physics - Experiment · Physics 2023-05-03 Chiara Brandenstein , Stefan Stelzl , Erwin Gutsmiedl , Wolfgang Schott , Andreas Weiler , Peter Fierlinger

The low dielectric losses of an isotropically pure single crystal $^{28}$Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality…

Mesoscale and Nanoscale Physics · Physics 2017-07-26 Nikita Kostylev , Maxim Goryachev , Andrey D. Bulanov , Vladimir A. Gavva , Michael E. Tobar

The latest determination of the Avogadro constant, carried out by counting the atoms in a pure silicon crystal highly enriched in 28Si, reached the target 2x10-8 relative uncertainty required for the redefinition of the kilogram based on…

Instrumentation and Detectors · Physics 2016-01-25 Giancarlo D'Agostino , Marco Di Luzio , Giovanni Mana , Massimo Oddone , Axel Pramann , Michele Prata

Accurate cross section data for electron impact ionization (EII) are needed in order to interpret the spectra of collisionally ionized plasmas both in astrophysics and in the laboratory. Models and spectroscopic diagnostics of such plasmas…

Atomic Physics · Physics 2015-06-18 Michael Hahn

We report a study by electron paramagnetic resonance (EPR) on the E'_\alpha point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si…

Disordered Systems and Neural Networks · Physics 2007-05-23 G. Buscarino , S. Agnello , F. M. Gelardi

Natural silicon consists of three stable isotopes with atomic mass 28 (92.21%), 29 (4.70%) and 30 (3.09%). To present day, isotopic enrichment of Si was used in electronics for two goals: (i) fabrication of substrates with high level of…

Materials Science · Physics 2007-05-23 Issai Shlimak

We report the relative abundances of the three stable isotopes of silicon, $^{28}$Si, $^{29}$Si and $^{30}$Si, across the Galaxy using the $v = 0, J = 1 \to 0$ transition of silicon monoxide. The chosen sources represent a range in…

Astrophysics of Galaxies · Physics 2017-09-26 Nathaniel N. Monson , Mark R. Morris , Edward D. Young

The stopping cross sections S (E) of silicon for protons and alpha particles have been measured over the velocity range 0.3-1.2 MeV/u from a SIMOX target using the Rutherford Backscattering Spectrometry (RBS) with special emphasis put on…

Instrumentation and Detectors · Physics 2021-10-01 M. Abdesselam , S. Ouichaoui , M. Azzouz , A. C. Chami , M. Siad

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is…

Bilodeau and Haugan [1], using Infrared laser photodetachment spectroscopy, measured the binding energies (BEs) of the ground state (4Fe9/2) and the excited state (4Fe7/2) of the Os^- ion to be 1.07780(12) eV and 0.553(3) eV, respectively.…

Atomic Physics · Physics 2012-08-09 Zineb Felfli , Filmon Kiros , Kelvin Suggs , Alfred Z. Msezane

The unusually large hyperfine structure splittings in the 23P state of the 3He isotope is measured using electro-optic techniques with high precision laser spectroscopy. Originally designed to probe the fine structure of the 4He atom, this…

Atomic Physics · Physics 2012-03-14 Marc Smiciklas

The possible occurrence of highly deformed configurations in the $^{40}$Ca di-nuclear system formed in the $^{28}$Si + $^{12}$C reaction is investigated by analyzing the spectra of emitted light charged particles. Both inclusive and…

Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was…

We apply near-threshold laser photodetachment to characterize the rotational quantum level distribution of OH$^-$ ions stored in the cryogenic ion-beam storage ring, DESIREE, at Stockholm University. We find that the stored ions relax to a…

We have investigated the threshold of photodetachment of Li^- leading to the formation of the residual Li atom in the $2p ^2P$ state. The excited residual atom was selectively photoionized via an intermediate Rydberg state and the resulting…

‹ Prev 1 2 3 10 Next ›