Related papers: Precision measurements on Si-
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum…
Solid electrolyte interphase (SEI), a thin layer that dynamically forms between active electrode and electrolyte during battery operation, critically governs the performance of rechargeable batteries1-5. An ideal SEI is expected to be…
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using…
The heat capacity of isotopically enriched 28Si, 29Si, 30Si samples has been measured in the temperature range between 4K and 100K. The heat capacity of Si increases with isotopic mass. The values of the Debye temperature for the three…
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…
We performed a measurement of the ionization response of 200 $\mu$m-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/$\mu$m. The aSe target was exposed to ionizing radiation from a $^{57}$Co radioactive source…
We present the study of the effects of high energy cosmic rays (CRs) over the astrophysical ices, observed toward the embedded class I protostar Elias 29, by using computational modeling and laboratory data. Its spectrum was observed with…
We present a first study based on the analysis of the DEep Spectra of Ionized REgions Database (DESIRED). This is a compilation of 190 high signal-to-noise ratio optical spectra of HII regions and other photoionized nebulae, mostly observed…
Inclusive as well as exclusive energy spectra of the light charged particles emitted in the $^{28}Si(E_{lab}=112.6 MeV) + ^{28}Si,^{12}C$ reactions have been measured at the Strasbourg VIVITRON facility in the angular range 15^0 - 150^0,…
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows…
We demonstrate a technique to measure hyperfine structure using a frequency-stabilized diode laser and an acousto-optic modulator locked to the frequency difference between two hyperfine peaks. We use this technique to measure hyperfine…
We report ionization cross section measurements for electron impact single ionization (EISI) of Fe^11+$ forming Fe^12+ and electron impact double ionization (EIDI) of Fe^11+ forming Fe^13+. The measurements cover the center-of-mass energy…
A study of identification properties of a Si-Si DE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated…
Velocity and energy spectra of the light charged particles (protons and $\alpha$-particles) emitted in the $^{28}$Si(E$_{lab}$ = 112 MeV) + $^{28}$Si reaction have been measured at the Strasbourg VIVITRON Tandem facility. The ICARE charged…
We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with…
We present a study of the energy resolution of transition-edge sensors (TESs) for the detection of electrons in the 100 eV kinetic energy range. The TES is a Ti-Au bilayer with an active area of $(60 \times 60)$ $\mu \text{m}^2$ and a…
Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower…
Cross sections and form factors for $\ee \to \wpi$, $\rho\eta$, and $\rho\etap$ at center of mass energies of 3.650, 3.686, and 3.773 GeV are measured using data samples collected with the BESII detector at the BEPC. Also, the branching…
A comprehensive study of selected properties of four (TiZrNbCu)_1-xNi_x (x \le 0.25) amorphous high entropy alloys (a-HEA) has been performed. The samples were ribbons about 20 \mum thick and their fully amorphous state was verified by…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…