Related papers: Precision measurements on Si-
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect…
The isotope effects in Si$^-$ bound levels are studied using the multi-configuration Hartree-Fock ab initio approach. Large scale calculations are carried out for the $3p^3\ ^4S^o,\, ^2D^o$ and $^2P^o$ multiplets of Si$^-$ and the $3p^2\…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an optically induced high-temperature spin-3/2 alignment in…
Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze…
In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $\overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by…
The measurement of Cesium (Cs) 7D5/2 excited state's hyperfine splitting intervals and hyperfine-interaction constants has been experimentally investigated based on ladder-type (852 nm + 698 nm) three-level Cs system (6S1/2 - 6P3/2 - 7D5/2)…
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…
We have measured and analyzed the hyperfine structure of two lines, one at 583nm and one at 401nm, of the only stable fermionic isotope of atomic erbium as well as determined its isotope shift relative to the four most-abundant bosonic…
High-resolution spectroscopy on the $A^2\Pi$ - $X^2\Sigma^+$ electronic system of $^{138}$Ba$^{19}$F is performed using a cold molecular beam produced by a buffer gas source. The hyperfine structure in both $X^2\Sigma^+$ ground and $A^2\Pi$…
Laser spectroscopy of the low lying $^1$P and $^3$D states in atomic barium has been performed. This work contributes substantially to the development of an effective laser cooling and trapping for heavy alkaline earth elements and aims in…
Accurate measurements of electron density are critical for determination of the plasma properties in the solar corona. We compare the electron densities diagnosed from Fe XIII lines observed by the Extreme-Ultraviolet Imaging Spectrometer…
We report an experimetal study by Electron Paramagnetic Resonance (EPR) of E'-delta point defect induced by gamma ray irradiation in amorphous SiO2. We obtained an estimetion of the intensity of the 10 mT doublet characterizing the EPR…
Observations of recurrent explosive events (EEs) with time scale of 3-5 minutes are reported. These EEs have been observed with the Interface Region Imaging Spectrograph (IRIS) and have a spatial dimension of $\sim1.5"$ along the slit. The…
A multiconfiguration microscopic method has been applied with the Gogny effective interaction to the calculation of low-lying positive-parity states in even-even $^{26-28}$Si isotopes. The aim of the study is to compare the results of this…
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…
Rich soft X-ray emission lines of highly charged silicon ions (Si VI--Si XII) were observed by irradiating an ultra-intense laser pulse with width of 200 fs and energy of $\sim$90 mJ on the solid silicon target. The high resolution spectra…
Using data samples collected by the BESIII detector operating at the BEPCII storage ring, we measure the $e^+e^- \to K_{S}^{0}K^{\pm}\pi^{\mp}$ Born cross sections at center-of-mass energies between 3.8 and 4.6\,GeV, corresponding to a…
In this work, Rayleigh microwave scattering was utilized to measure the electron number density produced by nanosecond high voltage breakdown in air between two electrodes in a pin-to-pin configuration (peak voltage 26 kV and pulse duration…
The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the…