ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Paul G. Spizzirri; Wayne D. Hutchison; Nikolas Stavrias; Jeffrey C. McCallum; Nakorn Suwuntanasarn; Libu K. Alexander; Steven Prawer

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Materials Science 2010-02-10 v1

Authors: Paul G. Spizzirri , Wayne D. Hutchison , Nikolas Stavrias , Jeffrey C. McCallum , Nakorn Suwuntanasarn , Libu K. Alexander , Steven Prawer

View on arXiv ↗ PDF ↗

Abstract

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface.

Keywords

ESR phosphorus donors ion implantation Si-SiO2 interface hyperfine resonance donor activation

Cite

@article{arxiv.1002.1764,
  title  = {ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface},
  author = {Paul G. Spizzirri and Wayne D. Hutchison and Nikolas Stavrias and Jeffrey C. McCallum and Nakorn Suwuntanasarn and Libu K. Alexander and Steven Prawer},
  journal= {arXiv preprint arXiv:1002.1764},
  year   = {2010}
}

Comments

13 pages, 5 figures, regular paper

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Abstract

Keywords

Cite

Comments

Related papers