Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

Jinming Lu; Felix Hoehne; Andre R. Stegner; Lukas Dreher; Hans Huebl; Martin Stutzmann; Martin S. Brandt

doi:10.1103/PhysRevB.83.235201

Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

Materials Science 2015-05-27 v1

Authors: Jinming Lu , Felix Hoehne , Andre R. Stegner , Lukas Dreher , Hans Huebl , Martin Stutzmann , Martin S. Brandt

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Abstract

Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.

Keywords

electrical detection free induction decay Hahn echo phosphorus donors silicon electron paramagnetic resonance Ramsey fringes

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@article{arxiv.1102.1550,
  title  = {Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon},
  author = {Jinming Lu and Felix Hoehne and Andre R. Stegner and Lukas Dreher and Hans Huebl and Martin Stutzmann and Martin S. Brandt},
  journal= {arXiv preprint arXiv:1102.1550},
  year   = {2015}
}

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9 pages, 9 figures

Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

Abstract

Keywords

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