Long spin coherence in silicon with an electrical spin trap readout

G. W. Morley; D. R. McCamey; H. A. Seipel; L. -C. Brunel; J. van Tol; C. Boehme

doi:10.1103/PhysRevLett.101.207602

Long spin coherence in silicon with an electrical spin trap readout

Quantum Physics 2009-09-25 v2 Materials Science

Authors: G. W. Morley , D. R. McCamey , H. A. Seipel , L. -C. Brunel , J. van Tol , C. Boehme

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Abstract

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments.

Keywords

spin polarization and magnetic phenomena spin relaxation magnetic resonance

Cite

@article{arxiv.0806.3431,
  title  = {Long spin coherence in silicon with an electrical spin trap readout},
  author = {G. W. Morley and D. R. McCamey and H. A. Seipel and L. -C. Brunel and J. van Tol and C. Boehme},
  journal= {arXiv preprint arXiv:0806.3431},
  year   = {2009}
}

Comments

13 pages, 3 figures. References updated, figure removed to reduce length of paper

Long spin coherence in silicon with an electrical spin trap readout

Abstract

Keywords

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