Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

D. R. McCamey; H. Huebl; M. S. Brandt; W. D. Hutchison; J. C. McCallum; R. G. Clark; A. R. Hamilton

doi:10.1063/1.2358928

Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

Materials Science 2007-05-23 v1 Other Condensed Matter

Authors: D. R. McCamey , H. Huebl , M. S. Brandt , W. D. Hutchison , J. C. McCallum , R. G. Clark , A. R. Hamilton

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Abstract

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.

Keywords

electrically-detected magnetic resonance ion-implanted silicon phosphorus nanostructures single donor spins quantum information processing EDMR nanostructures

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@article{arxiv.cond-mat/0605516,
  title  = {Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures},
  author = {D. R. McCamey and H. Huebl and M. S. Brandt and W. D. Hutchison and J. C. McCallum and R. G. Clark and A. R. Hamilton},
  journal= {arXiv preprint arXiv:cond-mat/0605516},
  year   = {2007}
}

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9 pages, 3 figures

Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

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