We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to ∼ 2 V/μm to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the 28Si SOI layer and find a contact hyperfine Stark parameter of ηa=−1.9±0.2×10−3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.
@article{arxiv.1401.6885,
title = {Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures},
author = {C. C. Lo and S. Simmons and R. Lo Nardo and C. D. Weis and A. M. Tyryshkin and J. Meijer and D. Rogalla and S. A. Lyon and J. Bokor and T. Schenkel and J. J. L. Morton},
journal= {arXiv preprint arXiv:1401.6885},
year = {2015}
}