Stark Tuning of Donor Electron Spins in Silicon

Forrest R. Bradbury; Alexei M. Tyryshkin; Guillaume Sabouret; Jeff Bokor; Thomas Schenkel; Stephen A. Lyon

doi:10.1103/PhysRevLett.97.176404

Stark Tuning of Donor Electron Spins in Silicon

Materials Science 2007-05-23 v1 Other Condensed Matter

Authors: Forrest R. Bradbury , Alexei M. Tyryshkin , Guillaume Sabouret , Jeff Bokor , Thomas Schenkel , Stephen A. Lyon

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Abstract

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

Keywords

Stark effect donor electron spins silicon hyperfine coupling g-factor pulsed electron spin resonance

Cite

@article{arxiv.cond-mat/0603324,
  title  = {Stark Tuning of Donor Electron Spins in Silicon},
  author = {Forrest R. Bradbury and Alexei M. Tyryshkin and Guillaume Sabouret and Jeff Bokor and Thomas Schenkel and Stephen A. Lyon},
  journal= {arXiv preprint arXiv:cond-mat/0603324},
  year   = {2007}
}

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10 pages, 4 figures, to be submitted to PRL

Stark Tuning of Donor Electron Spins in Silicon

Abstract

Keywords

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