Related papers: Stark Tuning of Donor Electron Spins in Silicon
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear…
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision…
We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark…
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using…
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley…
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC…
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…
We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant…
Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be manipulated and read out using its hyperfine interaction…
Negatively charged silicon vacancy centers (SiV$^-$) in diamond exhibit excellent spin coherence and optical properties, making them promising candidates for quantum technologies. However, the strain-induced inhomogeneous distribution of…
We examine a 31P donor electron spin in a Si crystal to be used for the purposes of quantum computation. The interaction with an uncontrolled system of 29Si nuclear spins influences the electron spin dynamics appreciably. The hyperfine…
We propose qubits based on shallow donor electron spins in germanium. Spin-orbit interaction for donor spins in germanium is in many orders of magnitude stronger than in silicon. In a uniform bulk material it leads to very short spin…