29Si Hyperfine Structure of the E'_\alpha Center in Amorphous Silicon Dioxide
Disordered Systems and Neural Networks
2007-05-23 v1 Other Condensed Matter
Abstract
We report a study by electron paramagnetic resonance (EPR) on the E'_\alpha point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E'_alpha consists in a pair of lines split by 49 mT. On the basis of the experimental results a microscopic model is proposed for the E'_alpha center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.
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Cite
@article{arxiv.cond-mat/0609643,
title = {29Si Hyperfine Structure of the E'_\alpha Center in Amorphous Silicon Dioxide},
author = {G. Buscarino and S. Agnello and F. M. Gelardi},
journal= {arXiv preprint arXiv:cond-mat/0609643},
year = {2007}
}
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4 pages