Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

H. Tezuka; A. R. Stegner; A. M. Tyryshkin; S. Shankar; M. L. W. Thewalt; S. A. Lyon; K. M. Itoh; M. S. Brandt

doi:10.1103/PhysRevB.81.161203

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

Materials Science 2015-05-18 v1

Authors: H. Tezuka , A. R. Stegner , A. M. Tyryshkin , S. Shankar , M. L. W. Thewalt , S. A. Lyon , K. M. Itoh , M. S. Brandt

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Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

Keywords

electron paramagnetic resonance boron acceptors isotopically purified silicon linewidth spin relaxation double excitation

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@article{arxiv.1003.4339,
  title  = {Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon},
  author = {H. Tezuka and A. R. Stegner and A. M. Tyryshkin and S. Shankar and M. L. W. Thewalt and S. A. Lyon and K. M. Itoh and M. S. Brandt},
  journal= {arXiv preprint arXiv:1003.4339},
  year   = {2015}
}

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4 pages, 3 figures

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

Abstract

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