相关论文: Graphene assisted III-V epitaxy towards substrate …
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking…
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…
Graphene is well known to grow as flat sheets aligned with the growth substrate. Oriented graphene structures typically normal to the substrate have recently gained major attention. Most often, normal orientation is achieved in…
In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE). We present a thorough experimental study on the…
Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently,…
We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese…
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and…
We investigated and demonstrated a 1.3 $\mu$m-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded In$_x$Ga$_{1-x}$As buffer and epitaxial structure on a GaAs substrate. Bottom…
III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and…
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for…
Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…
A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission…
A graphene layer on top of a dielectric can dramatically influence ability of the material to radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells.…
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the…
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered…
Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial…
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range.…
A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure.…
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010)…