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相关论文: Oxygen vacancies in vanadium dioxide: A DFT$+V$ st…

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In this study, oxygen vacancies and adatoms have been considered on the surface of both hexagonal and triangular ZnO nanowires. Their effect on the electronic structure and optical spectra of the nanowires have been investigated using the…

强关联电子 · 物理学 2018-03-01 Veysel Çelik , Ersen Mete

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…

It has been demonstrated in previous experimental and computational work that doping CeO2 with transition metals is an effective way of tuning its properties. However, each previous study on CeO2 doping has been limited to a single or a few…

材料科学 · 物理学 2020-12-14 Zhao Liua , Hongyang Ma , Charles C. Sorrell , Pramod Koshy , Judy N. Hart

Disorder, primarily in the form of oxygen vacancies, cation stoichiometry and atomic inter-diffusion, appear to play vital roles in the electronic and transport properties of the metallic electron liquid at the oxide hetero-interfaces.…

强关联电子 · 物理学 2018-07-05 Urmimala Dey , Swastika Chatterjee , A. Taraphder

A theory of the metal-insulator transition in vanadium dioxide from the high-temperature rutile to the low- temperature monoclinic phase is proposed on the basis of cluster dynamical mean field theory, in conjunction with the density…

强关联电子 · 物理学 2009-11-10 S. Biermann , A. Poteryaev , A. I. Lichtenstein , A. Georges

We carry out bond-strength based analysis for the migration barrier ($E_{\rm B}$) of oxygen vacancies in rutile-type 3$d$ transition-metal dioxides by combining density-functional theory (DFT) and the bond-valence model. The covalent and…

材料科学 · 物理学 2026-04-09 Inseo Kim , Minseok Choi

Manipulating oxygen vacancies in strongly correlated rare-earth nickelate perovskites (RNiO$_3$) enables the tuning of their elusive metal-insulator transition (MIT), providing a better handle for control over their electronic properties.…

强关联电子 · 物理学 2026-01-06 Uthpala Herath , Vijay Singh , Soumya S. Bhat , Hyowon Park , Aldo H. Romero

Defects creation and annihilation is a fundamental concept in device fabrication. This report studies the optical bandgap modification in MgO by MeV Ni ion irradiation-induced defect states between valance and conduction band. Ion…

材料科学 · 物理学 2022-02-15 Sourav Bhakta , Subhadip Pradhan , Ashis K. Nandy , Pratap K. Sahoo

Supported vanadia catalysts are modeled within the cluster DFT approach to get an insight into the mechanism in which the support affects the activity of vanadia in the oxidation processes. The energy of the V=O group dissociation chosen as…

材料科学 · 物理学 2018-03-29 Viktor Kovalskii , Igor Zilberberg

Oxygen vacancies at the SnO2(110) and (101) surface and subsurface sites have been studied in the framework of density functional theory by using both all-electron Gaussian and pseudopotential plane-wave methods. The all-electron…

材料科学 · 物理学 2008-06-06 F. Trani , M. Causa' , D. Ninno , G. Cantele , V. Barone

Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to…

强关联电子 · 物理学 2017-12-20 Huihuo Zheng , Lucas K. Wagner

Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has…

强关联电子 · 物理学 2020-08-26 Yasuhiro H. Matsuda , Daisuke Nakamura , Akihiko Ikeda , Shojiro Takeyama , Yuji Muraoka , Yuki Suga

Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…

The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free…

Density functional theory (DFT) calculations of defect levels in semiconductors based on approximate functionals are subject to considerable uncertainties, in particular due to inaccurate band gap energies. Testing previous correction…

材料科学 · 物理学 2015-05-14 Stephan Lany , Alex Zunger

The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases…

The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily…

The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…

强关联电子 · 物理学 2018-02-28 T. J. Huffman , D. J. Lahneman , S. L. Wang , T. Slusar , Bong-Jun Kim , Hyun-Tak Kim , M. M. Qazilbash

Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation…

应用物理 · 物理学 2021-05-24 P Ashok , Yogesh Singh Chauhan , Amit Verma

The oxygen vacancy formation energy ($\Delta E_{vf}$) governs defect dynamics and is a useful metric to perform materials selection for a variety of applications. However, density functional theory (DFT) calculations of $\Delta E_{vf}$ come…