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相关论文: Field driven Metal-Insulator transition in rhomboh…

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Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…

强关联电子 · 物理学 2020-12-02 Guangqiang Wang , Guoqing Chang , Huibin Zhou , Wenlong Ma , Hsin Lin , M. Zahid Hasan , Su-Yang Xu , Shuang Jia

We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…

强关联电子 · 物理学 2017-06-13 Kaveh Ahadi , Susanne Stemmera

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

强关联电子 · 物理学 2008-02-03 K. Ismail , J. O. Chu , Dragana Popovic , A. B. Fowler , S. Washburn

The quasi-two-dimensional organic superconductor beta-(BEDT-TTF)_2SF_5CH_2CF_2SO_3 (T_c approx 4.4 K)shows very strong Shubnikov-de Haas (SdH) oscillations which are superimposed on a highly anomalous steady background magnetoresistance,…

An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low holes of approximately n_p=5x10^{14} cm^{-3} into the valence…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Yong-Sik Lim

Magnetic field and temperature dependence of the Terahertz conductivity and permittivity of the colossal magnetoresistance manganite Pr_{0.65}Ca_{0.28}Sr_{0.07}MnO_3 (PCSMO) is investigated approaching the metal-to-insulator transition…

强关联电子 · 物理学 2007-05-23 A. Pimenov , M. Biberacher , D. Ivannikov , A. Loidl , A. A. Mukhin , Yu. G. Goncharov , A. M. Balbashov

The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…

When high quality bismuth or graphite crystals are placed in a magnetic field directed along the c-axis (trigonal axis for bismuth) and the temperature is lowered, the resistance increases as it does in an insulator but then saturates. We…

强关联电子 · 物理学 2007-05-23 Xu Du , Shan-Wen Tsai , Dmitrii L. Maslov , Arthur F. Hebard

Metal-to-insulator transitions (MITs), particularly near room temperature, have been extensively studied in nonmagnetic and conventional ferromagnetic and antiferromagnetic systems, yet the co-emergence of MIT and altermagnetism (AM)…

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

The metal-insulator transition (MIT) of BaVS3 is suppressed under pressure and above the critical pressure of p~2GPa the metallic phase is stabilized. We present the results of detailed magnetoresistivity measurements carried out at…

强关联电子 · 物理学 2007-05-23 P. Fazekas , N. Barisic , I. Kezsmarki , L. Demko , H. Berger , L. Forro , G. Mihaly

We report the experimental observation of a magnetic-field-tuned superconductor-insulator transition (SIT) in ultrathin TiN films. The low temperature transport properties of these films show scaling behavior consistent with a transition…

超导电性 · 物理学 2007-05-23 Tatyana I. Baturina , D. R. Islamov , Z. D. Kvon , M. R. Baklanov , A. Satta

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

Transport and magnetic properties have been systematically investigated for SmMnAsO_{1-x} with controlled electron-doping. As the electron band-filling is increased with the increase of oxygen deficiency (x), the resistivity monotonically…

强关联电子 · 物理学 2015-05-28 Y. Shiomi , S. Ishiwata , Y. Taguchi , Y. Tokura

Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…

强关联电子 · 物理学 2009-10-30 K. P. Li , Dragana Popovic , S. Washburn

Applied magnetic field induces metal - insulator and re-entrant insulator-metal transitions in both graphite and rhombohedral bismuth. The corresponding transition boundaries plotted on the magnetic field - temperature (B - T) plane nearly…

强关联电子 · 物理学 2009-11-11 Y. Kopelevich , J. C. Medina Pantoja , R. R. da Silva , S. Moehlecke

Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition…

强关联电子 · 物理学 2015-05-20 Tai-Lung Wu , Luisa Whittaker , Sarbajit Banerjee , G. Sambandamurthy

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites,…

材料科学 · 物理学 2011-07-19 Ursula Wurstbauer , Cezary Śliwa , Dieter Weiss , Tomasz Dietl , Werner Wegscheider

The gigantic reduction of the electric resistivity under the applied magnetic field, CMR effect, is now widely accepted to appear in the vicinity of the insulator to metal transition of the perovskite manganites. Recently, we have…

强关联电子 · 物理学 2007-05-23 Y. Endoh , H. Nojiri , K. Kaneko , K. Hirota , T. Fukuda , H. Kimura , Y. Murakami , S. Ishihara , S. Maekawa , S. Okamoto , M. Motokawa
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