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相关论文: hBN alignment orientation controls moir\'e strengt…

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Hexagonal boron nitride (h-BN) is a natural hyperbolic material, for which the dielectric constants are the same in the basal plane (epsilon^t = epsilon^x = epsilon^y) but have opposite signs (epsilon^t*epsilon^z < 0) from that in the…

Moir\'e superlattice of twisted hexagonal boron nitride (hBN) has emerged as an advanced atomically thin van der Waals interfacial ferroelectricity platform. Nanoscale periodic ferroelectric moir\'e domains with out-of-plane potentials in…

The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the…

材料科学 · 物理学 2012-05-14 Jürgen Schiefele , Fernando Sols , Francisco Guinea

In fractionally filled Landau levels there is only a small energy difference between broken translational symmetry electron-crystal states and exotic correlated quantum fluid states. We show that the spatially periodic substrate interaction…

介观与纳米尺度物理 · 物理学 2016-08-03 Ashley M. DaSilva , Jeil Jung , Allan H. MacDonald

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be…

材料科学 · 物理学 2013-09-04 Jiangtao Wu , Baolin Wang , Yujie Wei , Ronggui Yang , Mildred Dresselhaus

We report on the fabrication and characterization of dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Due to the moire effect, the hBN/BLG superlattice harbors an energy gap at the charge neutral point (CNP)…

介观与纳米尺度物理 · 物理学 2024-10-10 Takuya Iwasaki , Yoshifumi Morita

Hexagonal boron nitride (hBN) is a natural hyperbolic material which can also accommodate highly dispersive surface phonon-polariton modes. In this paper, we examine theoretically the mid-infrared optical properties of graphene-hBN…

光学 · 物理学 2015-07-03 Anshuman Kumar , Tony Low , Kin Hung Fung , Phaedon Avouris , Nicholas X. Fang

Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics…

In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational…

介观与纳米尺度物理 · 物理学 2016-06-03 B. Amorim , R. M. Ribeiro , N. M. R. Peres

Graphene on hBN (G/hBN) has a long period moir\'{e} superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moir\'{e} superstructure induces modulation of electronic properties of the…

介观与纳米尺度物理 · 物理学 2022-08-11 Keisuke Nakagahara , Katsunori Wakabayashi

Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and…

介观与纳米尺度物理 · 物理学 2021-04-21 David Andres Galeano Gonzalez , Bheema Lingam Chittari , Youngju Park , Jin-Hua Sun , Jeil Jung

Twisted double- and mono-bilayer graphene are graphene-based moir\'e materials hosting strongly correlated fermions in a gate-tunable conduction band with a topologically non-trivial character. Using unbiased exact diagonalization…

强关联电子 · 物理学 2023-03-22 Patrick H. Wilhelm , Thomas C. Lang , Mathias S. Scheurer , Andreas M. Läuchli

We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moir\'{e} heterostructure with a moir\'{e} wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning…

介观与纳米尺度物理 · 物理学 2024-10-30 Yueyang Wang , Hongxia Xue , Xiong Wang , Kenji Watanabe , Takashi Taniguchi , Dong-Keun Ki

Graphene and some graphene like two dimensional materials; hexagonal boron nitride (hBN) and silicene have unique mechanical properties which severely limit the suitability of conventional theories used for common brittle and ductile…

材料科学 · 物理学 2017-04-11 Tawfiqur Rakib , Satyajit Mojumder , Sourav Das , Sourav Saha , Mohammad Motalab

The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure…

介观与纳米尺度物理 · 物理学 2024-10-22 E. Arrighi , V. -H. Nguyen , M. Di Luca , G. Maffione , Y. Hong , L. Farrar , K. Watanabe , T. Taniguchi , D. Mailly , J. -C. Charlier , R. Ribeiro-Palau

We investigate low energy excitons in rhombohedral pentalayer graphene encapsulated by hexagonal boron nitride (hBN/R5G/hBN), focusing on the regime at the experimental twist angle $\theta = 0.77^\circ$ and with an applied electric field.…

介观与纳米尺度物理 · 物理学 2026-03-10 Henry Davenport , Frank Schindler , Johannes Knolle

We study the anomalous Hall effect, magneto-optical properties, and nonlinear optical properties of twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (hBN) substrate as well as twisted double bilayer graphene systems. We…

介观与纳米尺度物理 · 物理学 2021-01-27 Jianpeng Liu , Xi Dai

Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moir\'e…

We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…

无序系统与神经网络 · 物理学 2014-09-11 P. S. Alekseev , A. P. Dmitriev , I. V. Gornyi , V. Yu. Kachorovskii

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence…