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We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely-aligned crystal lattices. We show that perturbations with different spatial symmetry can lead to similar absorption spectra. We…

介观与纳米尺度物理 · 物理学 2015-09-22 D. S. L. Abergel , M. Mucha-Kruczynski

Thermal conductivity of homogeneous twisted stacks of graphite is found to strongly depend on the misfit angle. The underlying mechanism relies on the angle dependence of phonon-phonon couplings across the twisted interface. Excellent…

介观与纳米尺度物理 · 物理学 2020-10-19 Wengen Ouyang , Huasong Qin , Michael Urbakh , Oded Hod

The electronic properties graphene nanoflakes (GNFs) with embedded hexagonal boron nitride (hBN) domains are investigated by combined {\it ab initio} density functional theory calculations and machine learning techniques. The energy gaps of…

介观与纳米尺度物理 · 物理学 2018-12-12 G. A. Nemnes , T. L. Mitran , A. Manolescu

Realizing Chern insulators with Chern numbers greater than one remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional…

We assess the impact of atomistic substrate lattice relaxation schemes in the primary band gap at charge neutrality and the secondary valence band gap of graphene on hexagonal boron nitride (G/h-BN) as a function of twist angle. For zero…

介观与纳米尺度物理 · 物理学 2026-02-24 Jiaqi An , Nicolas Leconte , Srivani Javvaji , Youngju Park , Jeil Jung

The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser…

We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of…

The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological…

介观与纳米尺度物理 · 物理学 2024-03-26 Wenqiang Zhou , Jing Ding , Jiannan Hua , Le Zhang , Kenji Watanabe , Takashi Taniguchi , Wei Zhu , Shuigang Xu

We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2…

Zigzag edges of graphene have long been predicted to exhibit magnetic electronic state near the Fermi level, which can cause spin-related phenomena and offer unique potentials for graphene-based spintronics. However, the magnetic conduction…

We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

材料科学 · 物理学 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly

Intrinsic rhombohedral graphene hosts an unusual low-energy electronic wavefunction, predominantly localized at its outer crystal faces with negligible presence in the bulk. Increasing the number of graphene layers amplifies the density of…

In binary compound 2D insulators/semiconductors such as hexagonal boron nitride (hBN), the different electron affinities of atoms can give rise to out-of-plane electric polarizations across inversion asymmetric van der Waals interface of…

介观与纳米尺度物理 · 物理学 2023-09-04 Hongyi Yu , Ziheng Zhou , Wang Yao

A dramatic difference between the vertical thermal conductance response of homogeneous and heterogeneous graphene/h-BN interfaces to external mechanical perturbations, is predicted. Homogeneous graphene and h-BN interfaces exhibit strong…

介观与纳米尺度物理 · 物理学 2026-04-30 Wenwu Jiang , Huasong Qin , Yilun Liu , Wengen Ouyang , Oded Hod , Michael Urbakh

According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moir\'e patterns produced by small misalignments between its individual layer honeycomb lattices. We have…

Insulating, atomically flat transition metal dichalcogenides (TMDs) like WSe2 are ideal substrates for probing intrinsic graphene properties. Conventionally, their influence on graphene's band structure is assumed negligible, particularly…

介观与纳米尺度物理 · 物理学 2025-10-14 Chi Zhang , Shihao Zhang , Mengmeng Zhang , Lin He , Qi Zheng

Rhombohedral graphene systems with different number of layers feature an abundance of correlated phases and superconducting states in experimental measurements with different doping and displacement fields. Some of the superconducting…

In this thesis, I propose a practical way to stabilize half passivated graphene (graphone). I show that the dipole moments induced by a hexagonal-boron nitride (h-BN) substrate on graphene stabilize the hydrogen atoms on one sublattice of…

介观与纳米尺度物理 · 物理学 2016-12-21 Shayan Hemmatiyan

Two-dimensional (2D) materials like graphene and h-BN usually show high thermal conductivity, which enables rich applications in thermal dissipation and nanodevices. Disorder, on the other hand, is often present in 2D materials. Structural…

材料科学 · 物理学 2022-06-01 Yu-Tian Zhang , Yun-Peng Wang , Yu-Yang Zhang , Shixuan Du , Sokrates T. Pantelides
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