相关论文: On the Vulnerability of UMOSFETs in Terrestrial Ra…
Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…
In this article, we investigate the Single Events Effects (SEE) leading to Single Event Burnout (SEB) in $\beta$-Ga$_2$O$_3$ MOSFETs. Using Silvaco TCAD, 2D simulations were performed to understand the mechanism behind the SEB mechanism in…
Local metal interconnection is widely used in modern complementary metal oxide semiconductor (CMOS) technology. The most frequently used local materials are some heavy metals, such as tungsten (W) or copper (Cu). It's well known that single…
Transition metal dichalcogenides (TMDs) attract significant attention as potential building blocks in next-generation electronic devices. On the other hand, a comprehensive understanding of how various defects affect local electronic…
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are…
This report estimates the potential for secondary emission processes induced by ionizing radiation to result in the generation of quasiparticles in superconducting circuits. These estimates are based on evaluation of data collected from a…
A long-standing limitation of semiconductor neutron detectors is the lack of a scalable solution to make large area instruments. Neutron detectors are used in a wide range of applications, including the nuclear industry, safeguarding…
After introduction we focus on: the transport of charged particles, the acceleration of ions at shocks, and the acceleration of electrons at shocks. Chapter 2 studies the propagation of solar energetic particles(SEPs) in turbulent magnetic…
CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC…
The need for quantitative characterization of the solar energetic particle (SEP) dynamics goes beyond being an academic discipline only. It has numerous practical implications related to human activity in space. The terrestrial magnetic…
Owing to the high stored energy of ITER plasmas, the heat pulses due to uncontrolled Type I edge localized modes (ELMs) can be sufficient to melt the top surface of several poloidal rows of tungsten monoblocks in the divertor strike point…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
Quantum devices are a promising solution to many research applications, including medical imaging, precision magnetic field measurements, condensed matter physics, and overcoming the limits of classical computing. Among the available…
We find a new utility of neutrons, usually treated as an experimental nuisance causing unwanted background, in probing new physics signals. They can either be radiated from neutrons (neutron bremsstrahlung) or appear through secondary…
Electrical and electronic systems can be disturbed by radiation-induced effects. In some cases, radiation-induced effects are of a low probability and can be ignored; however, radiation effects must be considered when designing systems that…
Astrophysical ionizing radiation events such as supernovae, gamma-ray bursts, and solar proton events have been recognized as a potential threat to life on Earth, primarily through depletion of stratospheric ozone and subsequent increase in…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
The Meissner-Ochsenfeld effect is demonstrated for the first time at room temperature. The diamagnetic response of a silicon nanostructure with edge channels covered by chains of negative U dipole boron centers is studied when put in…
Atomic layers of black phosphorus (P) isolated from its layered bulk make a new two-dimensional (2D) semiconducting crystal with sizable direct bandgap, high carrier mobility, and promises for 2D electronics and optoelectronics. However,…
The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…