冷中子对掺硼CMOS有源像素传感器造成的辐射损伤
仪器与探测器
2017-06-09 v1
摘要
CMOS单片有源像素传感器（MAPS）被认为是带电粒子跟踪领域的一项新兴技术。它们将用于STAR、CBM和ALICE等实验的顶点探测器，并被考虑用于ILC和ATLAS的径迹探测器。在这些应用中，传感器会暴露在相当大的辐射剂量下。虽然MAPS对电离辐射和快强子的耐受性已广为人知，但低能中子造成的损伤迄今尚未被研究。这些慢中子可能引发MAPS掺硼硅有源介质中B掺杂剂的核裂变。预计这种效应会产生超出纯硅NIEL（非电离能量损失）模型预测的未知量的辐射损伤。我们通过计算这种裂变产生的额外NIEL来估计此效应的影响。此外，我们展示了用冷中子辐照的CMOS传感器的首批测量数据。实验结果在定性和定量上都与更新后的NIEL模型预测相矛盾：用慢中子辐照的传感器显示出意想不到且强烈的受主去除效应，而这在MeV中子辐照的传感器中并未观察到。
引用
@article{arxiv.1706.02611,
title = {Radiation damage caused by cold neutrons in boron doped CMOS active pixel sensors},
author = {B. Linnik and T. Bus and M. Deveaux and D. Doering and P. Kudejova and F. M. Wagner and A. Yazgili and J. Stroth},
journal= {arXiv preprint arXiv:1706.02611},
year = {2017}
}
备注
This is an author-created, un-copyedited version of an article published in Journal of Statistical Mechanics: Theory and Experiment. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at the link below.