中文
相关论文

相关论文: Interlayer Hopping between Surface Mott Insulator …

200 篇论文

1T-TaS$_2$ undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott…

强关联电子 · 物理学 2020-08-26 Y. D. Wang , W. L. Yao , Z. M. Xin , T. T. Han , Z. G. Wang , L. Chen , C. Cai , Yuan Li , Y. Zhang

This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top…

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

In an electronic system with various interactions intertwined, revealing the origin of its many-body ground state is challenging and a direct experimental way to verify the correlated nature of an insulator has been lacking. Here we…

强关联电子 · 物理学 2021-05-19 Jinwon Lee , Kyung-Hwan Jin , Han Woong Yeom

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

We investigate the nature of the insulating phases in a bilayer Hubbard model with intralayer coupling $t$ and interlayer coupling $t_{\perp}$ at large interaction strength $U/t$ and half-filling. We consider a dynamical cluster…

强关联电子 · 物理学 2015-06-17 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with…

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSL). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the Mott state in monolayer 1T-NbSe2, an electronic…

介观与纳米尺度物理 · 物理学 2021-09-08 Zhen-Yu Liu , Shuang Qiao , Qiao-Yin Tang , Zi-Heng Ling , Wen-Hao Zhang , Hui-Nan Xia , Xin Liao , Wen-Hao Mao , Jing-Tao Lü , Bing Huang , Ying-Shuang Fu

Stacking and twisting van der Waals materials provide a powerful tool to design quantum matter and engineer electron correlation. For instance, monolayers of 1T- and 1H-TaS2 are Mott insulating and metallic (also superconducting),…

材料科学 · 物理学 2025-02-14 Hyeonhu Bae , Roser Valenti , Igor I. Mazin , Binghai Yan

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the…

The compounds 1T-TaX2 (X = S, Se) and 1T-NbSe2 have been considered as potential hosts of a quantum spin liquid phase. This is based on the widely held view that the Mott-Hubbard mechanism drives the insulating behaviour of its charge…

强关联电子 · 物理学 2025-09-23 C. J. Butler , M. Naritsuka , T. Hanaguri

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

强关联电子 · 物理学 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu

When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional…

4Hb-TaS2 has been proposed to possess unconventional superconductivity with broken time reveral symmetry due to distinctive layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave…

强关联电子 · 物理学 2024-06-18 Junho Bang , Byeongin Lee , Hyungryul Yang , Sunghun Kim , Dirk Wulferding , Doohee Cho

The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…

强关联电子 · 物理学 2009-11-11 Andreas Fuhrmann , David Heilmann , Hartmut Monien

In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such…

材料科学 · 物理学 2022-04-27 N. Götting , F. Lohof , C. Gies

Understanding how microscopic interactions control macroscopic phase transitions is central to quantum materials, where charge density waves (CDWs), Mott states, and superconductivity often compete. In $1T$-TaS$_2$, this competition is tied…

强关联电子 · 物理学 2026-03-06 Achyut Tiwari , Bruno Gompf , Martin Dressel

Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition,…

The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…

强关联电子 · 物理学 2015-06-22 H. Ishida , A. Liebsch
‹ 上一页 1 2 3 10 下一页 ›