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相关论文: Engineering nonlinear Hall effect in bilayer graph…

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Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…

介观与纳米尺度物理 · 物理学 2015-06-05 Wei Yan , Wen-Yu He , Zhao-Dong Chu , Mengxi Liu , Lan Meng , Rui-Fen Dou , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Lin He

After the experimental realization, the Berry curvature dipole (BCD) induced nonlinear Hall effect (NLHE) has attracted tremendous interest to the condensed matter community. Here, we investigate another family of Hall effect, namely,…

介观与纳米尺度物理 · 物理学 2021-11-24 Snehasish Nandy , Chuanchang Zeng , Sumanta Tewari

In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the…

介观与纳米尺度物理 · 物理学 2022-04-22 Junxi Duan , Yu Jian , Yang Gao , Huimin Peng , Jinrui Zhong , Qi Feng , Yugui Yao

In the presence of time reversal symmetry, a non-linear Hall effect can occur in systems without an inversion symmetry. One of the prominent candidates for detection of such Hall signals are Weyl semimetals. In this article, we investigate…

介观与纳米尺度物理 · 物理学 2023-08-22 Saswata Roy , Awadhesh Narayan

Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…

介观与纳米尺度物理 · 物理学 2025-06-09 G. Maffione , L. S. Farrar , M. Kapfer , K. Watanabe , T. Taniguchi , H. Aubin , D. Mailly , R. Ribeiro-Palau

Under broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field,…

材料科学 · 物理学 2020-02-04 Hua Wang , Xiaofeng Qian

Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are…

介观与纳米尺度物理 · 物理学 2024-08-19 Suvronil Datta , Saisab Bhowmik , Harsh Varshney , Kenji Watanabe , Takashi Taniguchi , Amit Agarwal , U. Chandni

We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or…

介观与纳米尺度物理 · 物理学 2020-04-24 Hui Yang , Junjie Zeng , Yulei Han , Zhenhua Qiao

It is well-known that a non-vanishing Hall conductivity requires time-reversal symmetry breaking. However, in this work, we demonstrate that a Hall-like transverse current can occur in second-order response to an external electric field in…

介观与纳米尺度物理 · 物理学 2015-12-22 Inti Sodemann , Liang Fu

The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE). Here we show a new Hall effect…

介观与纳米尺度物理 · 物理学 2018-10-09 Kaifei Kang , Tingxin Li , Egon Sohn , Jie Shan , Kin Fai Mak

2D ferroelectrics with robust polarization down to atomic thicknesses provide novel building blocks for functional heterostructures. Experimental reports, however, remain scarce because of the requirement of a layered polar crystal. Here,…

介观与纳米尺度物理 · 物理学 2021-06-04 Kenji Yasuda , Xirui Wang , Kenji Watanabe , Takashi Taniguchi , Pablo Jarillo-Herrero

The recent observations of nonlinear Hall effect in time-reversal symmetry protected systems and on the surface of three-dimensional topological insulators due to an in-plane magnetic field have attracted immense experimental and…

介观与纳米尺度物理 · 物理学 2021-12-01 Rajesh K. Malla , Avadh Saxena , Wilton J. M. Kort-Kamp

Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k gate stacks since the potential difference between two layers…

应用物理 · 物理学 2018-09-18 Teerayut Uwanno , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently…

Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…

材料科学 · 物理学 2020-01-22 Shifei Qi , Ruiling Gao , Maozhi Chang , Yulei Han , Zhenhua Qiao

Van der Waals (vdW) heterostructures ---formed by stacking or growing two-dimensional (2D) crystals on top of each other--- have emerged as a new promising route to tailor and engineer the properties of 2D materials. Twisted bilayer…

介观与纳米尺度物理 · 物理学 2020-08-05 G. Catarina , B. Amorim , Eduardo V. Castro , J. M. Viana Parente Lopes , N. M. R. Peres

Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer…

材料科学 · 物理学 2023-01-24 M. R. Ebrahimi , T. Vazifehshenas

Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…

Interfacial interactions in two parallel-stacked hexagonal boron-nitride (hBN) layers facilitate sliding ferroelectricity, enabling novel device functionalities. Additionally, when Bernal or twisted bilayer graphene is aligned with an hBN…

介观与纳米尺度物理 · 物理学 2026-04-23 Tianyu Zhang , Yueyang Wang , Hongxia Xue , Kenji Watanabe , Takashi Taniguchi , Dong-Keun Ki

The quantum geometric structure of electrons introduces fundamental insights into understanding quantum effects in materials. One notable manifestation is the non-linear Hall effect (NLHE), which has drawn considerable interest for its…

材料科学 · 物理学 2025-02-26 Hung-Ju Tien , Hsin Lin , Liang Fu , Tay-Rong Chang