相关论文: Engineering nonlinear Hall effect in bilayer graph…
We theoretically investigated the Floquet states of bilayer graphene heterostructure under the irradiation by horizontally incident circular polarized light. The in-plane and out-of-plane electric field of the light periodically perturbs…
Among the van der Waals heterostructures, graphene/h-BN heterostructure is an appropriate candidate for 2D nanoelectronic devices. In this paper, using non-equilibrium molecular dynamics simulation approach, heat transport in bilayer…
The possibility of hybridizing collective electronic motion with mid-infrared (mid-IR) light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics.…
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of…
Recent studies have reported emergent ferroelectric behavior in twisted or moir\'e-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer…
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field…
In a system with inversion symmetry broken, a second-order nonlinear Hall effect can survive even in the presence of time-reversal symmetry. In this work, we show that a giant nonlinear Hall effect can exist in twisted bilayer WTe2 system.…
We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic…
The introduction of 'twist' or relative rotation between two atomically thin van der Waals (vdW) membranes gives rise to periodic Moire potential, leading to a substantial altercation of the band structure of the planar assembly. While most…
We employ ab-initio electronic structure calculations to investigate the charge-density waves and periodic lattice distortions in bilayer 2H-NbSe$_2$. We demonstrate that the vertical stacking can give rise to a variety of patterns that may…
The recently discovered nonlinear Hall (NLH) effect arises either without external magnetic field (type-I) or with an in-plane magnetic field (type-II). In this work we propose a new type of geometrical nonlinear Hall effect with an…
Unconventional responses upon breaking discrete or crystal symmetries open avenues for exploring emergent physical systems and materials. By breaking inversion symmetry, a nonlinear Hall signal can be observed, even in the presence of…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum…
The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the emergence of large nonlinear Hall effects (NHE) in the…
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic…
We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…
Van der Waals ferroelectrics are conventionally switched by sliding the different layers between stacking orders with opposing electric polarizations. Ultrashort laser pulses have been proposed to launch shear modes and induce switching,…
Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical…
Two-dimensional (2D) van der Waals (vdW) ferromagnets have emerged as a critical class of quantum materials for next-generation, low-dimensional spintronic devices. In this study, we report a comprehensive study of the transport properties…