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相关论文: Engineering nonlinear Hall effect in bilayer graph…

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We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band…

介观与纳米尺度物理 · 物理学 2024-06-13 Tarik P. Cysne , W. J. M. Kort-Kamp , Tatiana G. Rappoport

Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole…

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521…

介观与纳米尺度物理 · 物理学 2022-08-23 Rui Chen , Hai-Peng Sun , Mingqiang Gu , Chun-Bo Hua , Qihang Liu , Hai-Zhou Lu , X. C. Xie

We develop a theory of nonlinear response to an electric field of two-dimensional (2D) fermions with topologically non-trivial wave functions characterized by the Berry phase $\Phi_n = n \pi, n = 1,2,...$. In particular, we find that owing…

介观与纳米尺度物理 · 物理学 2020-04-22 O. E. Raichev , M. A. Zudov

Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice…

Spontaneous symmetry-breaking, where the ground state of a system has lower symmetry than the underlying Hamiltonian, is ubiquitous in physics. It leads to multiply-degenerate ground states, each with a different "broken" symmetry labeled…

介观与纳米尺度物理 · 物理学 2015-06-15 Jonathan S. Alden , Adam W. Tsen , Pinshane Y. Huang , Robert Hovden , Lola Brown , Jiwoong Park , David A. Muller , Paul L. McEuen

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high field regime, the eight-fold degeneracy in the zero…

介观与纳米尺度物理 · 物理学 2015-05-14 Y. Zhao , P. Cadden-Zimansky , Z. Jiang , P. Kim

The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and to the…

材料科学 · 物理学 2023-06-14 J. W. González

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and…

介观与纳米尺度物理 · 物理学 2015-05-27 A. Kumar , W. Escoffier , J. M. Poumirol , C. Faugeras , D. P. Arovas , M. M. Fogler , F. Guinea , S. Roche , M. Goiran , B. Raquet

Coherent excitation of shear phonons in van der Waals layered materials is a non-destructive mechanism to fine-tune the electronic state of the system. We develop a diagrammatic theory for the displacive Raman force and apply it to the…

介观与纳米尺度物理 · 物理学 2022-10-19 Habib Rostami

A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest…

介观与纳米尺度物理 · 物理学 2020-09-16 Minhao He , Yuhao Li , Jiaqi Cai , Yang Liu , K. Watanabe , T. Taniguchi , Xiaodong Xu , Matthew Yankowitz

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moir\'{e} transition metal…

介观与纳米尺度物理 · 物理学 2023-03-01 Jin-Xin Hu , Ying-Ming Xie , K. T. Law

Many quantum materials of interest, ex., bilayer graphene, possess a number of closely spaced but not fully degenerate bands near the Fermi level, where the coupling to the far detuned remote bands can induce Berry curvatures of the…

介观与纳米尺度物理 · 物理学 2021-10-12 Ci Li , Matisse Wei-Yuan Tu , Wang Yao

Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zrn+1CnT2, T = O, F, OH, n = 1, 2) van der…

材料科学 · 物理学 2018-02-13 Hao Yuan , Zhenyu Li

Exploring the topological characteristics of electronic bands is essential in condensed matter physics. Moir\'e materials featuring flat bands provide a versatile platform for engineering band topology and correlation effects. In moir\'e…

Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a…

介观与纳米尺度物理 · 物理学 2014-02-12 A. F. Young , J. D. Sanchez-Yamagishi , B. Hunt , S. H. Choi , K. Watanabe , T. Taniguchi , R. C. Ashoori , P. Jarillo-Herrero

The recently observed unconventional ferroelectricity in AB bilayer graphene sandwiched by hexagonal Boron Nitride (hBN) presents a new platform to manipulate correlated phases in multilayered van der Waals heterostructures. We present a…

介观与纳米尺度物理 · 物理学 2022-11-30 Ziyan Zhu , Stephen Carr , Qiong Ma , Efthimios Kaxiras

Emergent phenomena arising from the collective behavior of electrons is generally expected when Coulomb interactions dominate over the kinetic energy, as in delocalized quasiparticles in highly degenerate flat bands. Bernal-stacked bilayer…

We propose the nano-scale displacement sensor with high resolution for weak-force systems could be realized based on vertical stacked two-dimensional (2D) atomic corrugated layer materials bound through Van der Waals (VdW) interaction.…

材料科学 · 物理学 2015-06-11 Lin Hu , Jin Zhao , Jinlong Yang
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