相关论文: Strain-engineering spin-valley locking effect in a…
Altermagnetism, the third class of collinear magnetic order, uniquely combines a zero net magnetization with spin polarized bands in reciprocal space, opening new avenues for two dimensional valleytronics and spintronics. Here, using first…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
Inspired by recent theoretical proposal on the interesting piezomagnetism and C-paired valley polarization in V2Se2O monolayer, we predict a stable antiferromagnetic Janus monolayer V2SeTeO with altermagnetic configuration using density…
Altermagnetism, as a newly identified form of unconventional antiferromagnetism, enables the removal of spin degeneracy in the absence of net magnetization that provides a platform for the low power consumption and ultra-fast device…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
Altermagnetism has emerged as a third fundamental category of collinear magnetism, characterized by spin-splitting in symmetry-compensated collinear antiferromagnets, opening new frontiers in spintronics and condensed matter physics. Here,…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer $\mathrm{Cr_2SO}$ with eliminated inversion symmetry, which can realize the…
Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two novel altermagnetic…
Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we…
Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model…
A novel topological insulator with tunable edge states, called quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (SbH) monolayer on a LaFeO3 substrate by using ab initio methods.…
The anomalous Hall effect (AHE) is an efficient tool for detecting the N\'eel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we establish design principles for obtaining non-zero anomalous…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…