相关论文: Strain-engineering spin-valley locking effect in a…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic…
Anisotropic skyrmion Hall effect (A-SkHE) in two-dimensional (2D) magnetic systems represents a captivating phenomenon in condensed-matter physics and materials science. While conventional antiferromagnetic systems inherently suppress this…
Altermagnetism exhibits advantages over both ferromagnetic and antiferromagnetic counterparts by enabling spin splitting within antiferromagnetic materials. Currently, it is established that valley polarization in altermagnetism remains…
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins…
The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the…
We apply density functional theory to explore the magnetoelectric (ME) properties of two-dimensional $\mathrm{Nb}_3\mathrm{(Cl,Br,I)}_8$. These compounds have recently been proposed to exhibit coupled ferroelectric and ferromagnetic order…
Exploring intrinsic magnetic topological insulators (TIs) for next-generation spintronic devices is still challenging in recent years. Here, we present a theoretical investigation on the electronic, magnetic and topological properties of…
A proximity effect at a van der Waals (vdW) interface enables creation of an emergent quantum electronic ground state. Here we demonstrate that an originally-superconducting two-dimensional (2D) NbSe2 forms a ferromagnetic ground state with…
The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples…
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this…
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of…
In this work, the BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure was fabricated and the anomalous Hall effect (AHE) was investigated the in BFO/SRO. It is found the nonmonotonic anomalous Hall resistivity behavior in BFO/SRO is originated from…
Stable and remarkable valley polarization effect is the key to utilizing valley degree of freedom in valleytronic devices. According to first-principles calculations and symmetry analysis, we reveal that valley polarization effect in…
In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional…
A triangular Co-ion lattice intercalated between 1-H NbS$_2$ layers can exhibit a large anomalous Hall effect (AHE) due to the finite scalar spin chirality originating from the non-coplanar $3q$ ordering of Co spins. This large AHE occurs…
Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below…
We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the…
The hidden altermagnetism has been theoretically proposed and then experimentally confirmed in metal $\mathrm{Cs_{1-\delta}V_2Te_2O}$, which exhibits two nearly degenerate ground-state magnetic configurations (C-type and G-type)…
The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is…