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Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

其他凝聚态物理 · 物理学 2013-07-04 Siddharth Gaba , Patrick Sheridan , Jiantao Zhou , Shinhyun Choi , Wei Lu

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

介观与纳米尺度物理 · 物理学 2015-04-08 V. K. Sangwan , D. Jariwala , I. S. Kim , K. -S. Chen , T. J. Marks , L. J. Lauhon , M. C. Hersam

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to…

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…

介观与纳米尺度物理 · 物理学 2025-10-28 Tongxin Chen , Yinyu Nie , Yafei Hao , Shengchun Shen , Jiajun Pan , Xiaoguang Li , Yuan Lu

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here…

介观与纳米尺度物理 · 物理学 2011-03-02 Yuriy V. Pershin , Massimiliano Di Ventra

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…

介观与纳米尺度物理 · 物理学 2016-09-02 Zhengyang Zhao , Mahdi Jamali , Noel D'Souza , Delin Zhang , Supriyo Bandyopadhyay , Jayasimha Atulasimha , Jian-Ping Wang

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

材料科学 · 物理学 2015-05-13 P. Krzysteczko , G. Reiss , A. Thomas

The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…

材料科学 · 物理学 2018-01-30 N. A. Tulina

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…

介观与纳米尺度物理 · 物理学 2010-02-03 V. Moshnyaga , M. Esseling , L. Sudheendra , O. I. Lebedev , K. Gehrke , G. Van Tendeloo , K. Samwer

Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by…

新兴技术 · 计算机科学 2021-10-11 Thomas Abbey , Alexantrou Serb , Spyros Stathopoulos , Loukas Michalas , Themis Prodromakis

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…

Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…

介观与纳米尺度物理 · 物理学 2023-05-31 Oleg G. Kharlanov

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…

应用物理 · 物理学 2025-03-17 Qiming Shao , Zhongrui Wang , Yan Zhou , Shunsuke Fukami , Damien Querlioz , Leon O. Chua

The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…

材料科学 · 物理学 2014-04-23 Ella Gale
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