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相关论文: Single-domain imaging in topological insulator Bi2…

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The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion…

材料科学 · 物理学 2021-11-11 Zhengtianye Wang , Stephanie Law

Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric…

材料科学 · 物理学 2013-08-08 Xin Luo , Michael B. Sullivan , Su Ying Quek

Bismuth telluride (Bi2Te3) and its alloys are the best bulk thermoelectric materials known today. The stacked quasi-two-dimensional (2D) layers of Bi2Te3 were also identified as topological insulators. In this paper we describe a method for…

介观与纳米尺度物理 · 物理学 2010-04-19 Desalegne Teweldebrhan , Vivek Goyal , Alexander A. Balandin

The discovery of strong topological insulators led to enormous activity in condensed matter physics and the discovery of new types of topological materials. Bisumth based chalcogenides are exemplary strong three dimensional topological…

Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted…

介观与纳米尺度物理 · 物理学 2018-03-07 G. H. Cao , H. J. Liu , J. H. Liang , L. Cheng , D. D. Fan , Z. Y. Zhang

The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray…

材料科学 · 物理学 2013-02-25 Handong Li , Lei Gao , Hui Li , Gaoyun Wang , Jiang Wu , Zhihua Zhou , Zhiming Wang

Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption…

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is…

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…

We show that by a simple two-steps measurement protocol one can extract the thermal properties of anisotropic insulator materials. We focus on Bi2Se3 single crystal, a layered crystal with individual sheets held together by Van der Waals…

Sesqui-chalcogenides serve as a critical bridge between traditional semiconductors and quantum materials, offering significant potential in applications such as thermoelectrics, phase change memory, and topological insulators. While…

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for…

介观与纳米尺度物理 · 物理学 2010-05-02 Desheng Kong , Jason C. Randel , Hailin Peng , Judy J. Cha , Stefan Meister , Keji Lai , Yulin Chen , Zhi-Xun Shen , Hari C. Manoharan , Yi Cui

Combining various two-dimensional materials into novel van der Waals (vdW) heterostructures has been shown to lead to new emergent quantum systems. A novel heterostructure composed of a vdW topological insulator (TI) such as…

Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family…

The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray…

Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI…

介观与纳米尺度物理 · 物理学 2010-07-09 Desheng Kong , Wenhui Dang , Judy J. Cha , Hui Li , Stefan Meister , Hailin Peng , Zhongfan Liu , Yi Cui

Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van…

材料科学 · 物理学 2015-05-18 H. D. Li , Z. Y. Wang , X. Kan , X. Guo , H. T. He , Z. Wang , J. N. Wang , T. L. Wong , N. Wang , M. H. Xie

Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental study of few-layer Si2Te3 was recently reported, showing…

材料科学 · 物理学 2016-05-13 Yevgeniy Puzyrev , X. Shen , C. Combs , S. T. Pantelides

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP…

材料科学 · 物理学 2015-07-13 Anthony Richardella , Abhinav Kandala , Joon Sue Lee , Nitin Samarth

Bi2Te3 is a member of a new class of materials known as topological insulators which are supposed to be insulating in the bulk and conducting on the surface. However experimental verification of the surface states has been difficult in…

强关联电子 · 物理学 2015-06-22 Sourabh Barua , K. P. Rajeev , Anjan K. Gupta
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