相关论文: Quantum Hall effect and current distribution in th…

Recently we wrote a paper on the theory of the quantum spin Hall effect(QSHE) in two dimensional(2D) topological insulators(TIs)1 which have been considered as do not add much new insight to the exhaustively studied topic of TI within a…

In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…

We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in…

The celebrated family of the Hall effect plays a fundamental role in modern physics. Starting from the anomalous Hall effect (AHE) and the quantum AHE (QAHE) with broken time-reversal symmetry (TRS) to their spinful generalizations,…

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…

We develop a simple model of surface states for topological insulators, developing matching relations for states on surfaces of different orientations. The model allows one to write simple Dirac Hamiltonians for each surface, and to…

We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…

We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of…

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities,…

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…

The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…

We show that for the case of a many valley host semiconductor an edge channel (EC) related non-local behaviour can persist also in the 3D-regime where the quantum Hall effect (QHE) is already quenched. We demonstrate that the QHE is…

The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However,…

Here we conjecture on a topological model based on the M\"obius strip derived from the current distribution at the plateaus of the Quantum Hall Effect (QHE). It can account for the fractional values of the QHE in an easy way.

To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…

Topological insulators are bulk electronic insulators which possess symmetry protected gapless modes on their surfaces. Breaking the symmetries that underlie the gapless nature of the surface modes is predicted to give rise to exotic new…

We present a different approach to the fractional quantum Hall effect (FQHE), focusing it as a consequence of the change in the symmetry of the Hamiltonian of every electron in a two-dimensional electron gas (2DEG) under the application of…

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance ({\nu}e2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a…