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This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is…

介观与纳米尺度物理 · 物理学 2019-12-06 Arnout Beckers , Farzan Jazaeri , Christian Enz

In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…

Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…

Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…

Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…

介观与纳米尺度物理 · 物理学 2020-07-01 Mohammad Zarenia , Shaffique Adam , Giovanni Vignale

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…

Almost constant voltage plateaus on the V(I) curves of long quasi-one-dimensional superconducting aluminum wires placed in magnetic field at temperatures T slightly below the critical superconducting temperature Tc were found which were…

超导电性 · 物理学 2019-08-13 V. I. Kuznetsov , A. A. Firsov

We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…

介观与纳米尺度物理 · 物理学 2007-05-23 A. E. Hansen , A. Kristensen , H. Bruus

A great number of the existing data for electrical transport, the Altshuler Aronov Spivak and Aharonov Bohm effects, as well as the tunneling spectra of individual carbon nanotubes can be well explained by theories of the quantum phase…

超导电性 · 物理学 2007-05-23 Guo-meng Zhao

Superconductivity at temperatures up to 190 K at high pressures has recently been observed in $H_2S$ and interpreted as conventional BCS-electron-phonon-driven superconductivity.\cite{h2s} Instead we propose that it is another example of…

超导电性 · 物理学 2015-04-24 J. E. Hirsch , F. Marsiglio

The mechanism of superconductivity caused by the electron-vibrational centres and their inherent oscillations in crystals and solid-state structures near room temperature and at higher temperatures - hyperconductivity is discussed and…

超导电性 · 物理学 2007-05-23 V. A. Vdovenkov

An analytic theory is developed for the diagonal conductivity $\sigma_{xx}$ of a 2D conductor which takes account of the localized states in the broaden Landau levels. In the low-field region $\sigma_{xx}$ display the Shubnikov-de Haas…

介观与纳米尺度物理 · 物理学 2007-05-23 V. M. Gvozdikov

Previous theoretical studies on superconductivity were focused on the static states and adiabatic processes. Quantum mechanics simulations of time-dependent processes in superconductors were rarely performed previously. Here we use…

超导电性 · 物理学 2024-12-13 Zhigang Song , Xin Li

The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on the standard threshold voltage (SVT) and low threshold…

应用物理 · 物理学 2021-09-01 Yuanke Zhang , Tengteng Lu , Wenjie Wang , Yujing Zhang , Jun Xu , Chao Luo , Guoping Guo

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…

介观与纳米尺度物理 · 物理学 2009-11-10 Shi-Jie Yang , Yue Yu

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

The temperature dependence of both components of the resistivity tensor $\varrho_{xx}(T)$ and $\varrho_{xy}(T)$ has been studied at T $\geq$ 4.2 K within IQHE plateaux around filling factors \nu=2 and \nu=4 of medium- -mobility GaAs/AlGaAs…

介观与纳米尺度物理 · 物理学 2009-10-28 P. Svoboda , G. Nachtwei , C. Breitlow , S. Heide , M. Cukr

We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer $\mathrm{MoS_2}$, below an onset temperature same as the critical temperature $T_{\rm C}\approx7$ K of bulk Pb. Below $T_{\rm C}$, the…

超导电性 · 物理学 2025-05-26 Suraina Gupta , Santu Prasad Jana , Pawan Kumar Gupta , Anjan K. Gupta

The polarized reflectivity of $\beta^{\prime\prime}$-(BEDO-TTF)$_5$[CsHg(SCN)$_4$]$_2$ is studied in the infrared range between 60 cm-1 and 6000 cm-1 from room temperature down to 10 K. Already at T=300 K a pseudogap in the optical…

强关联电子 · 物理学 2007-05-23 N. Drichko , K. Petukhov , M. Dressel , O. Bogdanova , E. Zhilyaeva , R. Lyubovskaya , A. Greco , J. Merino

The spin susceptibility of noncentrosymmetric superconductors is studied when the gap function has line nodes. As examples, d-wave states, where the gap function has an additional odd-parity phase factor, are examined. The curve of the spin…

超导电性 · 物理学 2014-06-12 Hiroshi Shimahara
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