相关论文: Quantization Design for Resistive Memories With Mu…

Resistive random-access memory (ReRAM) is an emerging non-volatile memory technology for high-density and high-speed data storage. However, the sneak path interference (SPI) occurred in the ReRAM crossbar array seriously affects its data…

Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile memory technology due to its simple read/write operations and high storage density. However, its crossbar array structure causes a severe…

A novel framework for performance analysis and code design is proposed to address the sneak path (SP) problem in resistive random-access memory (ReRAM) arrays. The main idea is to decompose the ReRAM channel, which is both non-ergodic and…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

Compute-In-Memory (CIM) systems, particularly those utilizing ReRAM and memristive technologies, offer a promising path toward energy-efficient neural network computation. However, conventional quantization and compression techniques often…

The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…

Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…

Crossbar resistive memory with the 1 Selector 1 Resistor (1S1R) structure is attractive for nonvolatile, high-density, and low-latency storage-class memory applications. As technology scales down to the single-nm regime, the increasing…

Crossbar resistive memory with 1 Selector 1 Resistor (1S1R) structure is attractive for low-cost and high-density nonvolatile memory applications. As technology scales down to the single-nm regime, the increasing resistivity of…

Passive crossbar arrays based upon memristive devices, at crosspoints, hold great promise for the future high-density and non-volatile memories. The most significant challenge facing memristive device based crossbars today is the problem of…

Resistive Random Access Memory (RRAM) crossbar arrays are an attractive memory structure for emerging nonvolatile memory due to their high density and excellent scalability. Their ability to perform logic operations using RRAM devices makes…

Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

Despite the great promises that the resistive random access memory (ReRAM) has shown as the next generation of non-volatile memory technology, its crossbar array structure leads to a severe sneak path interference to the signal read back…

Crossbar architectures have long been seen as a promising foundation for in-memory computing, using memristor arrays for high-density, energy-efficient analog computation. However, this conventional architecture suffers from a fundamental…

Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain…

Resistive random access memory (ReRAM)-based processing-in-memory (PIM) architectures have demonstrated great potential to accelerate Deep Neural Network (DNN) training/inference. However, the computational accuracy of analog PIM is…

Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell…

Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of…

In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…