相关论文: Cryogenic Behavior of High-Permittivity Gate Diele…

We present results from cryogenic tests of a Volume-Phase Holographic (VPH) grating at 200 K measured at near-infrared wavelengths. The aims of these tests were to see whether the diffraction efficiency and angular dispersion of a VPH…

Dielectric spectroscopy of CaCu3Ti4O12 was performed spanning broad ranges of temperature (10-300K) and frequency (0.5Hz-2MHz). We attribute the permittivity step-fall to the evolution of Kirkwood-Fr\"oehlich dipole-correlations; reducing…

This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick…

Polycrystalline HfPd2Al has been synthesized using the arc-melting method and studied under ambient pressure conditions by x-ray diffraction from room temperature up to 450^oC. High pressure x-ray diffraction up to 23 GPa was also performed…

We report the high temperature dielectric and {\it ac} impedance spectroscopy investigation of Nb substituted LaCo$_{0.7}$Nb$_{0.3}$O$_3$ polycrystalline sample. The maximum dielectric constant value was observed $\approx$1400 at around…

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…

We report on the lattice evolution of BiFeO3 as function of temperature using far infrared emissivity, reflectivity, and X-ray absorption local structure. A power law fit to the lowest frequency soft phonon in the magnetic ordered phase…

High-dielectric-constant CaCu3Ti4O12 (CCTO) thin films were prepared on Pt/Ti/SiO2/Si(100) substrates by pulsed-laser deposition. The 480 nm thick polycrystalline films have preferred orientation and show obvious crystallization on the…

We present molecular dynamics simulations of shallow Al implantation in 4H-SiC to clarify how implantation temperature and dose control defect evolution and dopant activation during early annealing. Using the Gao-Weber potential together…

Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$\Omega$ at low temperatures,…

In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that…

We report dielectric spectroscopy of single-crystalline \ce{NdMgAl11O19}, a magnetoplumbite hexaaluminate in which localized \ce{Nd^{3+}} moments coexist with a polarizable \ce{AlO5} bipyramidal network. The real part of the permittivity,…

AFe$_{1 / 2}$B$_{1 / 2}$O$_{3}$(A- Ba, Sr, Ca; B-Nb, Ta, Sb) ceramics were synthesized and temperature dependencies of the dielectric permittivity were measured at different frequencies. The experimental data obtained show very high values…

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material selection and stack positioning. Here, we demonstrate that…

The rate coefficients of various isotopic variations of the H2+ + H2 and H3+ + H2 reactions in the 10-250 K temperature range were measured using a cryogenic 22 pole radio frequency ion trap. The processes involving diatomic ions were found…

We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A…

The complex dielectric permittivity of a sintered ceramic tablet consisting of 70.5 % $BiFeO_{3}$ and 27.7% $Bi_{2}Fe_{4}O_{9}$ was analyzed as a function of temperature from -120 {\deg}C to 230 {\deg}C. The results reveal a complicated…

We report on an extraordinary field effect of the superconducting LaAlO3/KTaO3(111) interface with Tc ~2 K. By applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states,…

In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800{\deg}C. The Al$_2$O$_3$ is grown within the same reactor as the…

We have performed ab initio molecular dynamics (MD) simulations to study the alkali-metal dynamics in the Al-doped (KAl0.33W1.67O6 and RbAl0.33W1.67O6) and undoped (KW2O6 and RbW2O6) defect pyrochlore tungstates. The K atoms exhibit novel…