相关论文: Tunneling valley Hall effect induced by coherent g…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a…
We theoretically investigate spin-valley-locked tunneling transport in a transition-metal dichalcogenide/ferromagnetic-insulator heterostructure under a perpendicular magnetic field, driven by the spin Seebeck effect. We demonstrate that…
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moir\'e bands with opposite Chern number…
We propose a novel nonlinear dynamical Hall effect characteristic of layered materials with chiral symmetry, which is driven by the joint action of in-plane and time variation of out-of-plane ac fields…
We study theoretically the parallel quantum wires of the experiment by Auslaender et al. [Science 308, 88 (2005)] at low electron density. It is shown that a Hall effect as observed in two- or three-dimensional electron systems develops as…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
We report on novel valley acoustoelectric effect, which can arise in a 2D material, like a transition metal dichalcogenide monolayer, residing on a piezoelectric substrate. The essence of this effect lies in the emergence of a drag electric…
The longitudinal current in a three-dimensional conductor is accompanied by transverse magnetic field in a specimen bulk. The absence of the transverse current in a sample bulk requires a nonzero Hall electric field in transverse…
Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
We experimentally investigate the valley-Hall effect for interfacial edge states, highlighting the importance of the modal patterns, between geometrically distinct regions within a structured elastic plate. These experiments, for vibration,…
We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$…
We investigate elastic periodic structures characterized by topologically nontrivial bandgaps supporting backscattering suppressed edge waves. These edge waves are topologically protected and are obtained by breaking inversion symmetry…
The thermoelectric Hall effect is the generation of a transverse heat current upon applying an electric field in the presence of a magnetic field. Here we demonstrate that the thermoelectric Hall conductivity $\alpha_{xy}$ in the…
The quantum valley Hall effect (QVHE) is characterized by the valley Chern number (VCN) in a way that one-dimensional (1D) chiral metallic states are guaranteed to appear at the domain walls (DW) between two domains with opposite VCN for a…
Poorly transparent barriers (e.g., reinforced walls, shielding panels, metallic or high-contrast dielectrics) strongly reflect incident radiation, limiting wireless power transfer (WPT) unless the barrier is structurally modified to support…
The search for two-dimensional materials with exotic valley-dependent properties has attracted rapid attention as they are fundamentally intriguing and practically appealing for nanoscale device applications. Here, using first-principles…
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with…
This study investigates the occurrence of acoustic topological edge states in a 2D phononic elastic waveguide due to a phenomenon that is the acoustic analogue of the quantum valley Hall effect. We show that a topological transition takes…