相关论文: Large spontaneous valley polarization and anomalou…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…
Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of…
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model…
Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization,…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
The spontaneous Hall effect, corresponding to a zero-field anomalous Hall effect (AHE), is induced by symmetry breaking associated with ferromagnetism. Studies in recent years, however, have revealed that antiferromagnetic (AFM) states…
Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valley-polarized quantum anomalous Hall insulator (VQAHI). Here,…
The interplay between magnetism and topological electronic structure offers a large freedom to design strong anomalous Hall effect (AHE) materials. A nodal line from band inversion is a typical band structure to generate strong AHE.…
The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to…
Ferroelectricity, anti-ferromagnetism (AFM) and quantum anomalous Hall effect (QAHE) are three fundamental phenomena in the field of condensed matter physics, which could enable the realization of novel devices and thus attracts great…
Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic…
An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…