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The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one…

介观与纳米尺度物理 · 物理学 2017-11-22 Mehrdad Shaygan , Martin Otto , Abhay A. Sagade , Carlos A. Chavarin , Gerd Bacher , Wolfgang Mertin , Daniel Neumaier

The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R$_{C}$) are still open issues in graphene technology. Here, we demonstrate the importance of following clear protocols when extracting…

A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact.…

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated…

材料科学 · 物理学 2022-11-23 Amit Gahoi , Stefan Wagner , Andreas Bablich , Satender Kataria , Vikram Passi , Max C. Lemme

We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap,…

介观与纳米尺度物理 · 物理学 2018-10-22 Ferran Jovell , Xavier Cartoixà

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…

介观与纳米尺度物理 · 物理学 2019-02-20 Filippo Giubileo , Antonio Di Bartolomeo

The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…

介观与纳米尺度物理 · 物理学 2013-12-17 Wei Sun Leong , Hao Gong , John T. L. Thong

The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to…

材料科学 · 物理学 2016-01-05 Krishna Bharadwaj B , Rudra Pratap , Srinivasan Raghavan

We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor…

We present transfer-length-method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the…

介观与纳米尺度物理 · 物理学 2015-05-30 C. E. Malec , B. Elkus , D. Davidovic

Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact…

Defects in the lattice are of primal importance to tune graphene chemical, thermal and electronic properties. Electron-beam irradiation is an easy method to induce defects in graphene following pre-designed patterns, but no systematic study…

材料科学 · 物理学 2023-06-28 Nicola Melchioni , Luca Bellucci , Alessandro Tredicucci , Federica Bianco

Graphene plasmonics has become a highlighted research area due to the outstanding properties of deep-subwavelength plasmon excitation, long relaxation time, and electro-optical tunability. Although the giant conductivity of a graphene layer…

光学 · 物理学 2024-04-11 Yunjung Kim , Sunkyu Yu , Namkyoo Park

Synthesis of graphene with reduced use of chemical reagents is essential for manufacturing scale-up and to control its structure and properties. In this paper, we report on a novel chemical-free mechanism of graphene exfoliation from…

Controlled modification of graphene properties is essential for its proposed electronic applications. Here we describe a possibility of tuning electrical properties of graphene via electron beam irradiation. We show that by controlling the…

材料科学 · 物理学 2015-10-28 G. Liu , D. Teweldebrhan , A. A. Balandin

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process,…

介观与纳米尺度物理 · 物理学 2014-12-30 Wei Sun Leong , Xin Luo , Yida Li , Khoong Hong Khoo , Su Ying Quek , John T. L. Thong

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

材料科学 · 物理学 2013-04-26 Kosuke Nagashio , Akira Toriumi

Using graphene as a tuneable optical material enables a series of optical devices such as switchable radar absorbers, variable infrared emissivity surfaces, or visible electrochromic devices. These devices rely on controlling the charge…

应用物理 · 物理学 2023-06-16 Xiaoxiao Yu , Gokhan Bakan , Hengyi Guo , M. Said Ergoktas , Pietro Steiner , Coskun Kocabas

Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves…

We study the response of graphene to high-intensity 10^11-10^12 Wcm^-2, 50-femtosecond laser pulse excitation. We establish that graphene has a fairly high (~3\times10^12Wcm^-2) single-shot damage threshold. Above this threshold, a single…

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