相关论文: Demonstration of 4H silicon carbide on aluminum ni…

Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…

Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into…

We investigate theoretically photonic chips with monolithically integrated blue light sources. According to our evaluations, a group-III nitride light emitting heterostructure can be efficiently combined with silicon nitride waveguiding…

The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…

We demonstrate integrated photonic circuits for quantum devices using sputtered polycrystalline aluminum nitride (AlN) on insulator. The on-chip AlN waveguide directional couplers, which are one of the most important components in quantum…

We introduce millimeter-wave silicon photonic crystal cavities as a versatile platform for the perturbative sensing of nanoscale materials. This dielectric-based platform is compatible with strong magnetic fields, opening avenues for…

We present a low-loss integrated photonics platform in the visible and near ultraviolet regime. Fully-etched waveguides based on atomic layer deposition (ALD) of aluminum oxide operate in a single transverse mode with $<$3 dB/cm propagation…

Niobium nitride (NbN) is a particularly promising material for quantum technology applications, as entails the degree of reproducibility necessary for large-scale of superconducting circuits. We demonstrate that resonators based on NbN thin…

We present a novel platform to construct high-performance nanophotonic devices in low refractive index dielectric films at telecoms wavelengths. The formation of horizontal slots by PECVD deposition of high index amorphous silicon provides…

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…

The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…

Lithium Niobate on Sapphire (LNOS) is an emerging platform for photonic integrated circuits, offering unique properties such as a wide transparency window, high nonlinearity, and strong electro-optic, nonlinear, and acousto-optic effects.…

The cubic polytype of silicon (Si) is the most commercialized semiconductor material and finds applications in numerous electronic and optoelectronic devices such as solar cells. However, recent reports on the synthesis of the hexagonal 4H…

Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…

Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To…

Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually…

Silicon nitride (Si3N4) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We…

Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…

Demonstrations of topological photonics have so far largely been confined to infrared wavelengths where imaging technology and access to low-dimensional quantum materials are both limited. Here, we designed and fabricated silicon nitride…

Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si…