相关论文: Demonstration of 4H silicon carbide on aluminum ni…
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed…
Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…
Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$…
Photonic integrated circuits based on Lithium Niobate have demonstrated the vast capabilities afforded by material with a high Pockels coefficient, allowing linear and high-speed modulators operating at CMOS voltage levels for applications…
Visible light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging and displays. Among the existing photonic…
While grating couplers have become the de-facto standard for optical access to integrated silicon photonics platforms, their performance at visible wavelengths, in moderate index contrast platforms like silicon nitride, leaves significant…
Organic semiconductors have potentials for a broad range of applications; however, it is difficult to be integrated with traditional inorganic material to meet the need of further application. Based on low-temperature silicon nitride (SiNx)…
Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Photonic integrated circuits utilize planar waveguides to process light on a chip, encompassing functions like generation, routing, modulation, and detection. Similar to the advancements in the electronics industry, photonics research is…
A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly…
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and…
We present a guide for the design and fabrication of a CMOS-compatible metamaterial microstructure as an absorber of visible light with exceptionally high absorption efficiency (~ 98%), for wavelengths 400nm-700nm. The structural parameters…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical…
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic…
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high…
The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks…
Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing…
The availability of large-area substrates imposes an important constraint on the technological and commercial realization of devices made of layered materials. Aluminum nitride films on silicon are shown to be promising candidate materials…