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相关论文: Interconnected Renormalization of Hubbard Bands an…

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The equation for the electron Green's function of the fermionic Hubbard model, derived using the strong coupling diagram technique, is solved self-consistently for the near-neighbor form of the kinetic energy and for half-filling. In this…

强关联电子 · 物理学 2015-06-11 A. Sherman

An analysis of Luttinger's theorem shows that -- contrary to recent claims -- it is not valid for a generic Mott insulator. For a two-orbital Hubbard model with two electrons per site the crossover from a non-magnetic correlated insulating…

强关联电子 · 物理学 2009-11-11 A. Rosch

We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

We propose a formalism to take account of the correction of the spatial fluctuations to the local self-energy obtained by the dynamical mean-field approximation. For this purpose, the approximate dynamical susceptibility in the framework of…

强关联电子 · 物理学 2009-11-11 Hiroaki Kusunose

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

We consider the repulsive Hubbard model on a square lattice with an additional term, W, which depends upon the square of a single-particle nearest-neighbor hopping. At half-band filling, constant W, we show that enhancing U/t drives the…

强关联电子 · 物理学 2007-05-23 F. F. Assaad

In this paper, we investigate the impact of nonlocal correlations on charge fluctuations in the two-dimensional single-band Hubbard model close to the Mott metal-to-insulator transition, employing the ladder dynamical vertex approximation.…

强关联电子 · 物理学 2025-10-21 Irakli Titvinidze , Julian Stobbe , Marvin Leusch , Georg Rohringer

We investigate the ground state properties of the two dimensional half-filled one band Hubbard model in the strong (large-U) to intermediate coupling limit ({\it i.e.} away from the strict Heisenberg limit) using an effective spin-only…

强关联电子 · 物理学 2007-05-23 J. -Y. P. Delannoy , M. J. P. Gingras , P. C. W. Holdsworth , A. -M. S. Tremblay

We study novel electronic properties of the Hubbard model on a triangular lattice using the cellular dynamical mean-field theory. The interplay of strong geometric frustration and electron correlations causes a Mott transition at the…

强关联电子 · 物理学 2009-11-11 Bumsoo Kyung

We present fully self-consistent calculations in the fluctuation exchange approximation for the half-filled Hubbard model in 2D. A non-fermi liquid state evolves with decreasing temperature in this self-consistent model of coupled spin…

凝聚态物理 · 物理学 2015-06-25 D. W. Hess , J. J. Deisz , J. W. Serene

We have studied the impact of non-local electronic correlations at all length scales on the Mott-Hubbard metal-insulator transition in the unfrustrated two-dimensional Hubbard model. Combining dynamical vertex approximation, lattice quantum…

强关联电子 · 物理学 2015-03-05 T. Schäfer , F. Geles , D. Rost , G. Rohringer , E. Arrigoni , K. Held , N. Blümer , M. Aichhorn , A. Toschi

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu

Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by…

强关联电子 · 物理学 2009-04-27 Kenji Yonemitsu

We present a formalism for strongly correlated electrons systems which consists in a local approximation of the dynamical three-leg interaction vertex. This vertex is self-consistently computed with a quantum impurity model with dynamical…

强关联电子 · 物理学 2016-04-01 Thomas Ayral , Olivier Parcollet

We present single-particle and thermodynamic properties of the half-filled single-band Hubbard model in 2D calculated in the self-consistent fluctuation exchange approximation. The low-energy excitations at moderate temperatures and small…

凝聚态物理 · 物理学 2009-10-28 J. J. Deisz , D. W. Hess , J. W. Serene

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

We study the charge dynamics of the half-filled Hubbard model on the square lattice at zero temperature. We employ a slave-fermion formulation in which the charge degrees of freedom are represented by fermionic holons and doublons and the…

强关联电子 · 物理学 2024-06-26 X. J. Han , Y. Liu , Z. Y. Liu , X. Li , J. Chen , Z. Y. Xie , B. Normand , T. Xiang

Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth $\Delta$ to the Hubbard repulsion…

强关联电子 · 物理学 2019-05-21 A. Sherman

Electron-electron and electron-phonon interactions are responsible for the formation of spin, charge, and superconducting correlations in layered quantum materials. A paradigmatic model for such materials that captures both kinds of…

强关联电子 · 物理学 2026-03-16 Aiman Al-Eryani , Sabine Andergassen , Michael M. Scherer

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov
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