相关论文: Quantization of Charge Carriers in Conduction Chan…

We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus…

We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…

We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…

We present the study of using depletion charges for tailoring lateral band profiles and applying it to the promising gate-all-around field-effect transistors (GAAFET). Specifically, we introduce heavily p-type doped Si next to the channel,…

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…

We consider the physical effects of dimensional quantization in conductive filaments that underlie operations of some modern electronic devices. We show that, as a result of quantization, a sufficiently constricted filament acquires a…

We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor…

Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…

In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…

The quantization of superconducting transmission-line resonators is usually introduced phenomenologically by modeling the resonator as an effective LC circuit and imposing canonical commutation relations on macroscopic variables such as…

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively…

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…

The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…

The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase design which utilizes the metallic T- or T' phase of the TMD as…

Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…