相关论文: High Frequency Response of Volatile Memristors
Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides…
The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of…
The distinct distribution of local magnetic fields due to superconducting vortices can be detected with nuclear magnetic resonance (NMR) and used to investigate vortices and related physical properties of extreme type II superconductivity.…
Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and…
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…
We study the response of a Hodgkin-Huxley neuron stimulated by a periodic sequence of conductance pulses arriving through the synapse in the high frequency regime. In addition to the usual excitation threshold there is a smooth crossover…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
A quantum memristor is a resistive passive circuit element with memory engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated…
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D…
The signature for a non-Fermi liquid behavior near a quantum phase transition has been observed in thermal and transport properties of many metallic systems at low temperatures. In the present work we consider specific examples of itinerant…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…
The crossover between two different conduction mechanisms (variable range and small polaron hoppings) is probed utilizing a conjunction of thermally varying conductivity and impedance in polycrystalline Pr2NiTiO6 (PNT). A combination of…
We investigate the onset of a not-decaying asymptotic behavior of temporal magnetic correlations in the Hubbard model in infinite dimensions. This long-term memory feature of dynamical spin correlations can be precisely quantified by…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
Entrainment experiments on the vertebrate segmentation clock have revealed that embryonic oscillators actively change their internal frequency to adapt to the driving signal. This is neither consistent with a one-dimensional clock model nor…
High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…
We study theoretically dynamics of a driven-dissipative qubit-resonator system. Specifically, a transmon qubit is coupled to a transmission-line resonator; this system is considered to be probed via a resonator, by means of either…
The behavior in magnetic fields of a highly correlated electron liquid approaching the fermion condensation quantum phase transition from the disordered phase is considered. We show that at sufficiently high temperatures $T\geq T^*(x)$ the…
We demonstrate a silicon-based high frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…