相关论文: Symmetry-Driven Valleytronics in Single-Layer Tin …
A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this…
The selective control of specific momentum valleys lies at the core of valleytronics, a field that has thus far focused primarily on the $\mathbf{K}$ and $\mathbf{K'}$ valleys in transition metal dichalcogenides (TMDs). However, direct…
Altermagnets have recently been recognized as a distinct class of magnetic materials characterized by alternative spin-split electronic structures without net magnetization. Despite intensive studies on their single-particle spintronic and…
Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these…
Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics.…
Transition metal dichalcogenides represent an ideal testbed to study excitonic effects, spin-related phenomena and fundamental light-matter coupling in nanoscopic condensed matter systems. In particular, the valley degree of freedom, which…
Single-layer semiconducting transition-metal dichalcogenides, lacking point inversion symmetry, provide an efficient platform for valleytronics, where the electronic, magnetic, valley and lattice degrees of freedom can be selectively…
Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling…
Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials.…
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and…
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer…
Strong spin-orbit coupling and inversion symmetry breaking in transition metal dichalcogenide monolayers yield the intriguing effects of valley-dependent optical selection rules. As such, it is possible to substantially polarize valley…
The group IV-VI compound SnSe, with an orthorhombic lattice structure, has recently attracted particular interest due to its unexpectedly low thermal conductivity and high power factor, showing great promise for thermoelectric applications.…
Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer…
A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental…